O 2 oxidation reaction at the Si(100)-SiO 2 interface: A first-principles investigation

Journal of Materials Science

Volumn 40, Issue 12, 2005, Pages 3047-3050

  Bongiorno, A ^a,c   Pasquarello, A ^b  

^a EPFL   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES INVESTIGATIONS; OXYGEN TRANSPORT; TRANSITION BARRIER; TRIPLET-SINGLET CROSSING;

CHARACTERIZATION; INTERFACES (MATERIALS); KINETIC THEORY; OXIDATION; OXYGEN; POLARIZATION; SEMICONDUCTING SILICON COMPOUNDS;

SILICA;

EID: 20544456161     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-005-2663-7     Document Type: Conference Paper

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