The conductance and capacitance-frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

Applied Surface Science

Volumn 253, Issue 7, 2007, Pages 3464-3468

  Cakar M ^a   Yildirim, N ^b   Dogan H ^b   Turut A ^b  

^a KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Capacitance conductance characteristics; Interface state density; Interfacial layer; Metal organic semiconductor contact; Schottky barrier

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; EVAPORATION; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SURFACE CHEMISTRY;

CAPACITANCE-CONDUCTANCE CHARACTERISTICS; FORWARD BIAS CURRENT-VOLTAGE; INTERFACE STATE DENSITY; RECTIFYING JUNCTION CHARACTERISTICS;

DYES;

EID: 33846275352     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.07.045     Document Type: Article

References (39)

1. Rhoderick E.H. Metal-Semiconductor Contacts (1978), Oxford University Press pp. 121, 136
2. Han S.Y., Choi K.J., Lee J.L., Mun J.K., Park M., and Kim H. J. Vac. Sci. Technol. B 21 5 (2003) 2133
3. Alti{dotless}ndal S., Dökme I., Bülbül M.M., Yalçi{dotless}n N., and Serin T. Microelectron. Eng. 8 (2006) 499
4. Karadeniz S., Tugluoglu N., Serin T., and Serin N. Appl. Surf. Sci. 246 (2005) 30
5. Saǧlam M., Türüt A., Nuhoǧlu C., Efeoǧlu H., Ki{dotless}li{dotless}çoǧlu T., and Ebeoǧlu M.A. Appl. Phys. A 65 (1997) 33
6. Lonergan M. Annu. Rev. Phys. Chem. 55 (2004) 257
7. Jones F.E., Wood B.P., Myers J.A., Daniels C.H., and Lonergan M.C. J. Appl. Phys. 86 (1999) 6431
8. Jones F.E., and Lonergan M.C. J. Chem. Phys. 115 1 (2001) 433
9. Passlack M., Hong M., and Mannaerts J.P. Solid-State Electron. 39 (1996) 1133
10. John A., and Palaniappan S. Polymer 46 December (26) (2005) 12037-12039
11. Ki{dotless}li{dotless}çoǧlu T., Öztürk Z.Z., Ebeoǧlu M.M., and Gülsün Z. Indian J. Pure Appl. Phys. 31 (1993) 718
12. Nicollian E.H., and Goetzberger A. Bell. Syst. Tech. J. 46 (1967) 1055
13. Nicollian E.H., and Brews J.R. MOS (Metal Oxide Semiconductor) Physics and Technology (1982), John Wiley and Sons, New York pp. 186, 214
14. Fernández J., Godignon P., Berberich S., Rebollo J., Brezenanu G., and Millán J. Solid-State Electron. 39 (1996) 1359
15. Biber M., Cakar M., and Turut A. J. Mater. Sci.-Mater. Electron. 12 (2001) 575
16. Lu X., Xu X., Wang N.Q., Zhang Q., and Lin M.C. J. Phys. Chem. B 105 (2001) 10069
17. Onganer Y., Saǧlam M., Türüt A., Efeoǧlu H., and Tüzemen S. Solid-State Electron. 39 (1996) 677
18. Jeszka J.K. Mater. Sci. Forum 191 (1995) 141
19. Temirci C., and Çakar M. Physica B 348 1-4 (2004) 454
20. Schopf G., and Kossmehl G. Adv. Polym. Sci. 129 (1997) 3
21. Forrest S.R., Kaplan M.L., and Schmidt P.H. J. Appl. Phys. 56 (1984) 543
22. Sharma G.D., Gupta S.K., and Roy M.S. Thin Solid Films 333 (1998) 176
23. Böhler A., Urbach P., Schöbel J., Dirr S., Johannes H.H., Wiese S., Ammermann D., and Kowalsky W. Physica E 2 (1998) 562
24. Forrest S.R., and Schmidt P.H. J. Appl. Phys. 59 (1986) 513
25. Çakar M., Onganer Y., and Türüt A. Synth. Met. 126 (2002) 213
26. Onganer Y., and Quitevis E.L. J. Phys. Chem. 96 (1992) 7996
27. Bati B., Nuhoǧlu C., Saǧlam M., Ayyildiz E., and Türüt A. Phys. Scr. 61 (2000) 209
28. Sharma G.D., Gupta S.K., and Roy M.S. Thin Solid Films 333 (1998) 176
29. Zuppiroli L., Si-Ahmed L., Kamaras K., Nuesch F., Bussac M.N., Ades D., Siove A., Moons E., and Gratzel M. Eur. Phys. J. B 11 (1999) 505
30. Liu Y.J., and Yu H.Z. Chem. Phys. Chem. 3 (2002) 799
31. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Willey, New York p. 245
32. El Yacoubi M., Evrard R., Nguyen N.D., and Schmeits M. Semicond. Sci. Technol. 15 (2000) 341
33. Evangelou E.K., Konofaos N., Craven M.R., Cranton W.M., and Thomas C.B. Appl. Surf. Sci. 166 (2000) 504
34. Kochowski S., Paszkiewicz B., and Paszkiewicz R. Vacuum 57 (2000) 157
35. Tagmouti T., Outzourhit A., Oueriagli A., Khaidar M., El Yacoubi M., Evrard R., and Ameziane E.L. Thin Solid Films 379 (2000) 272
36. Kanbur H., Altindal S., and Tataroglu A. Appl. Surf. Sci. 252 December (5) (2005) 1732-1738
37. Logothetidis S., Evangelou E.K., and Konofaos N. J. Appl. Phys. 82 (1997) 5017
38. Yuan H.X., Grubisic D., and Wong T.T.S. Solid-State Electron. 42 (1996) 677
39. Türüt A., and Saǧlam M. Physica B 179 (1992) 285