Effect of organic contamination on the electrical degradation of hydrogen-terminated silicon upon exposure to air under ambient conditions

Journal of the Electrochemical Society

Volumn 150, Issue 12, 2003, Pages

  Liu, Yong Jun ^a   Yu, Hua Zhong ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; MERCURY (METAL); SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

CURRENT DENSITY-BIAS VOLTAGE CURVE; ELECTRICAL DEGRADATION; HYDROGEN-TERMINATED SILICON; MERCURY-SILICON JUNCTION; ORGANIC CONTAMINATION;

SILICON WAFERS;

EID: 0346390625     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1627353     Document Type: Article

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