Stability of the Si-H bond on the hydrogen-terminated Si(1 1 1) surface studied by sum frequency generation

Surface Science

Volumn 476, Issue 1-2, 2001, Pages 121-128

  Ye, Shen ^a   Saito, Toshiya ^a   Nihonyanagi, Satoshi ^a   Uosaki, Kohei ^a   Miranda, Paulo B ^b   Kim, Doseok ^b   Shen, Yuen Ron ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; DESORPTION; ETCHING; INTERFACES (MATERIALS); SILICON; SPECTROSCOPIC ANALYSIS;

SUM FREQUENCY GENERATION (SFG) SPECTROSCOPY;

HYDROGEN BONDS;

EID: 0035276290     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00690-2     Document Type: Article

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