-
1
-
-
30344453097
-
-
Salomon, A.; Böcking, T.; Seitz, O.; Markus, T.; Amy, F.; Chan, C.; Zhao, W.; Cahen, D.; Kahn, A. Phys. Rev. Lett. 2005, 95, 266807.
-
(2005)
Phys. Rev. Lett
, vol.95
, pp. 266807
-
-
Salomon, A.1
Böcking, T.2
Seitz, O.3
Markus, T.4
Amy, F.5
Chan, C.6
Zhao, W.7
Cahen, D.8
Kahn, A.9
-
2
-
-
34250327848
-
-
Salomon, A.; Böcking, T.; Seitz, O.; Markus, T.; Amy, F.; Chan, C.; Zhao, W.; Cahen, D.; Kahn, A. Adv. Mater. 2007, 19, 445-450.
-
(2007)
Adv. Mater
, vol.19
, pp. 445-450
-
-
Salomon, A.1
Böcking, T.2
Seitz, O.3
Markus, T.4
Amy, F.5
Chan, C.6
Zhao, W.7
Cahen, D.8
Kahn, A.9
-
3
-
-
53849125061
-
-
Puniredd, S. R.; Assad, O.; Haick, H. J. Am. Chem. Soc. 2008, 130, 13727-13734.
-
(2008)
J. Am. Chem. Soc
, vol.130
, pp. 13727-13734
-
-
Puniredd, S.R.1
Assad, O.2
Haick, H.3
-
4
-
-
47749133849
-
-
Puniredd, S. R.; Assad, O.; Haick, H. J. Am. Chem. Soc. 2008, 130, 9184-9185.
-
(2008)
J. Am. Chem. Soc
, vol.130
, pp. 9184-9185
-
-
Puniredd, S.R.1
Assad, O.2
Haick, H.3
-
5
-
-
34547734540
-
-
Scheres, L.; Arafat, A.; Zuilhof, H. Langmuir 2007, 23, 8343-8346.
-
(2007)
Langmuir
, vol.23
, pp. 8343-8346
-
-
Scheres, L.1
Arafat, A.2
Zuilhof, H.3
-
6
-
-
33747172298
-
-
Seitz, O.; Booking, T.; Salomon, A.; Gooding, J. J.; Cahen, D. Langmuir 2006, 22, 6915-6922.
-
(2006)
Langmuir
, vol.22
, pp. 6915-6922
-
-
Seitz, O.1
Booking, T.2
Salomon, A.3
Gooding, J.J.4
Cahen, D.5
-
7
-
-
48849091441
-
-
Seitz, O.; Vilan, A.; Cohen, H.; Haeming, M.; Schoell, A.; Umbach, E.; Kahn, A.; Cahen, D. Adv. Funct. Mater. 2008, 18, 2102-2113.
-
(2008)
Adv. Funct. Mater
, vol.18
, pp. 2102-2113
-
-
Seitz, O.1
Vilan, A.2
Cohen, H.3
Haeming, M.4
Schoell, A.5
Umbach, E.6
Kahn, A.7
Cahen, D.8
-
8
-
-
47249105120
-
-
Salomon, A.; Shpaisman, H.; Seitz, O.; Böcking, T.; Cahen, D. J. Phys. Chem. C 2008, 112, 3969-3974.
-
(2008)
J. Phys. Chem. C
, vol.112
, pp. 3969-3974
-
-
Salomon, A.1
Shpaisman, H.2
Seitz, O.3
Böcking, T.4
Cahen, D.5
-
9
-
-
37249035984
-
-
Maldonado, S.; Plass, K. E.; Knapp, D.; Lewis, N. S. J. Phys. Chem. C 2007, 111, 17690-17699.
-
(2007)
J. Phys. Chem. C
, vol.111
, pp. 17690-17699
-
-
Maldonado, S.1
Plass, K.E.2
Knapp, D.3
Lewis, N.S.4
-
10
-
-
33846439753
-
-
Faberp, E. J.; Sparreboom, W.; Groeneveld, W.; de Smet, L. C. P. M.; Bomer, L. C. P. M.; Olthuis, W.; Zuilhof, H.; Sudhölter, E. J. R.; Bergveld, P.; van den Berg, A. ChemPhysChem 2007, 8, 101-112.
-
(2007)
ChemPhysChem
, vol.8
, pp. 101-112
-
-
Faberp, E.J.1
Sparreboom, W.2
Groeneveld, W.3
de Smet, L.C.P.M.4
Bomer, L.C.P.M.5
Olthuis, W.6
Zuilhof, H.7
Sudhölter, E.J.R.8
Bergveld, P.9
van den Berg, A.10
-
11
-
-
27144498545
-
-
Faber, E. J.; de Smet, L.; Olthuis, W.; Zuilhof, H.; Sudholter, E. J.; Bergveld, P.; Van den Berg, A. ChemPhysChem 2005, 6, 2153-2166.
-
(2005)
ChemPhysChem
, vol.6
, pp. 2153-2166
-
-
Faber, E.J.1
de Smet, L.2
Olthuis, W.3
Zuilhof, H.4
Sudholter, E.J.5
Bergveld, P.6
Van den Berg, A.7
-
12
-
-
13244260970
-
-
Yu, H.; Webb, L. J.; Ries, R. S.; Solares, S. D.; Goddard, W. A.; Heath, J. R.; Lewis, N. S. J. Phys. Chem. B 2005, 109, 671-674.
-
(2005)
J. Phys. Chem. B
, vol.109
, pp. 671-674
-
-
Yu, H.1
Webb, L.J.2
Ries, R.S.3
Solares, S.D.4
Goddard, W.A.5
Heath, J.R.6
Lewis, N.S.7
-
13
-
-
33846081919
-
-
Yu, H.; Webb, L. J.; Solares, S. D.; Cao, P.; Goddard, W. A.; Heath, J. R.; Lewis, N. S. J. Phys. Chem. B 2006, 110, 23898-23903.
-
(2006)
J. Phys. Chem. B
, vol.110
, pp. 23898-23903
-
-
Yu, H.1
Webb, L.J.2
Solares, S.D.3
Cao, P.4
Goddard, W.A.5
Heath, J.R.6
Lewis, N.S.7
-
14
-
-
0033884390
-
-
Sieval, A. B.; van den Hout, B.; Zuilhof, H.; Sudholter, E. J. R. Langmuir 2000, 16, 2987-2990.
-
(2000)
Langmuir
, vol.16
, pp. 2987-2990
-
-
Sieval, A.B.1
van den Hout, B.2
Zuilhof, H.3
Sudholter, E.J.R.4
-
15
-
-
0029274673
-
-
Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145-3155.
-
(1995)
J. Am. Chem. Soc
, vol.117
, pp. 3145-3155
-
-
Linford, M.R.1
Fenter, P.2
Eisenberger, P.M.3
Chidsey, C.E.D.4
-
17
-
-
0020921227
-
-
Tarr, N. G.; Pulfrey, D. L.; Camporese, D. S. IEEE Trans. Electron Devices 1983, 30, 1760.
-
(1983)
IEEE Trans. Electron Devices
, vol.30
, pp. 1760
-
-
Tarr, N.G.1
Pulfrey, D.L.2
Camporese, D.S.3
-
18
-
-
0016070974
-
-
Shewchun, J.; Green, M. A.; King, F. D. Solid-State Electron. 1974, 17, 563.
-
(1974)
Solid-State Electron
, vol.17
, pp. 563
-
-
Shewchun, J.1
Green, M.A.2
King, F.D.3
-
19
-
-
0016069350
-
-
Green, M. A.; King, F. D.; Shewchun, J. Solid-State Electron. 1974, 17, 551.
-
(1974)
Solid-State Electron
, vol.17
, pp. 551
-
-
Green, M.A.1
King, F.D.2
Shewchun, J.3
-
20
-
-
0004005306
-
-
3rd ed, John Wiley & Sons, Inc, New York
-
Sze, S. M.; Kwok, K. N. Physics of Semiconductor Devices, 3rd ed.; John Wiley & Sons, Inc.: New York, 2007.
-
(2007)
Physics of Semiconductor Devices
-
-
Sze, S.M.1
Kwok, K.N.2
-
21
-
-
66749191480
-
-
Surface states can increase the recombination current, an effect that is ignored here, for simplicity's sake
-
Surface states can increase the recombination current, an effect that is ignored here, for simplicity's sake.
-
-
-
-
24
-
-
66749134017
-
-
The exact difference depends on how clean the gold is
-
The exact difference depends on how clean the gold is.
-
-
-
-
25
-
-
33745555148
-
-
Shimizu, K. T.; Fabbri, J. D.; Jelincic, J.; Melosh, N. A. Adv. Mater. 2006, 18, 1499-1504.
-
(2006)
Adv. Mater
, vol.18
, pp. 1499-1504
-
-
Shimizu, K.T.1
Fabbri, J.D.2
Jelincic, J.3
Melosh, N.A.4
-
30
-
-
33749233464
-
-
Ralf, H.; Rainer, F.; Bengt, J.; Wolfram, J.; Lauren, J. W.; Nathan, S. L. Phys. Rev. B 2005, 72, 045317.
-
(2005)
Phys. Rev. B
, vol.72
, pp. 045317
-
-
Ralf, H.1
Rainer, F.2
Bengt, J.3
Wolfram, J.4
Lauren, J.W.5
Nathan, S.L.6
-
31
-
-
38149023390
-
-
Jaeckel, B.; Hunger, R.; Webb, L. J.; Jaegermann, W.; Lewis, N. S. J. Phys. Chem. C 2007, 111, 18204-18213.
-
(2007)
J. Phys. Chem. C
, vol.111
, pp. 18204-18213
-
-
Jaeckel, B.1
Hunger, R.2
Webb, L.J.3
Jaegermann, W.4
Lewis, N.S.5
-
32
-
-
66749178361
-
-
The electrostatic effect of the adsorbate (iv) is naturally also the one that is critical for sensors, such as a CHEMFET (Northrop, ref 33) or MOCSER (Cahen et al., ref 34); those effects are likely to be different for adsorption on bulk and nanosized (e.g., nanowires) substrates, in part because the bulk electrostatic analyses such as those used here are not or only partially applicable.
-
The electrostatic effect of the adsorbate (iv) is naturally also the one that is critical for sensors, such as a CHEMFET (Northrop, ref 33) or MOCSER (Cahen et al., ref 34); those effects are likely to be different for adsorption on bulk and nanosized (e.g., nanowires) substrates, in part because the bulk electrostatic analyses such as those used here are not or only partially applicable.
-
-
-
-
34
-
-
26844565924
-
-
Cahen, D.; Naaman, R.; Vager, Z. Adv. Funct. Mater. 2005, 15, 1571-1578.
-
(2005)
Adv. Funct. Mater
, vol.15
, pp. 1571-1578
-
-
Cahen, D.1
Naaman, R.2
Vager, Z.3
-
35
-
-
66749091003
-
-
2 vs V curve with the voltage axis (V), is not the flat band potential but the lower limit for the flat band potential. This is because the increase in the depletion layer width with increasing surface potential is minor for inverted surfaces compared to depleted surfaces (Shewchun, ref 18).
-
2 vs V curve with the voltage axis (V), is not the flat band potential but the lower limit for the flat band potential. This is because the increase in the depletion layer width with increasing surface potential is minor for inverted surfaces compared to depleted surfaces (Shewchun, ref 18).
-
-
-
-
36
-
-
59349092385
-
-
Har-Lavan, R.; Ron, I.; Thieblemont, F.; Cahen, D. Appl. Phys. Lett. 2009, 94, 043308.
-
(2009)
Appl. Phys. Lett
, vol.94
, pp. 043308
-
-
Har-Lavan, R.1
Ron, I.2
Thieblemont, F.3
Cahen, D.4
-
37
-
-
41449099492
-
-
Maldonado, S.; Knapp, D.; Lewis, N. S. J. Am. Chem. Soc. 2008, 130, 3300-3301.
-
(2008)
J. Am. Chem. Soc
, vol.130
, pp. 3300-3301
-
-
Maldonado, S.1
Knapp, D.2
Lewis, N.S.3
-
38
-
-
84927553170
-
-
Sah, C. T.; Noyce, R. N.; Shockley, W. Proc. IRE 1957, 45, 1228.
-
(1957)
Proc. IRE
, vol.45
, pp. 1228
-
-
Sah, C.T.1
Noyce, R.N.2
Shockley, W.3
-
39
-
-
66749132487
-
-
We note that an ideality factor >1 can also have other reasons, e.g, a tunnel barrier in series with TE Rhoderick, ref 22
-
We note that an ideality factor >1 can also have other reasons, e.g., a tunnel barrier in series with TE (Rhoderick, ref 22).
-
-
-
|