Hg/molecular monolayer-Si junctions: Electrical interplay between monolayer properties and semiconductor doping density

Journal of Physical Chemistry C

Volumn 114, Issue 22, 2010, Pages 10270-10279

  Cahen, David ^a   Yaffe, Omer ^a   Scheres, Luc ^b   Segev, Lior ^a   Biller, Ariel ^a   Ron, Izhar ^a   Salomon, Eric ^c   Giesbers, Marcel ^b   Kahn, Antoine ^c   Kronik, Leeor ^a   Zuilhof, Han ^b   Vilan, Ayelet ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b WAGENINGEN UNIVERSITY   (Netherlands)

^c Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKENYL; CAPACITANCE VOLTAGE; CHARGE TRANSPORT; CHARGE TRANSPORT PROPERTIES; CONTACT CONDUCTANCE; CONTROLLED NOT; CURRENT VOLTAGE; DEPLETION LAYER; DIPOLAR MOLECULES; DOUBLE BONDS; ELECTRICAL PROPERTY; ELECTRONIC STRUCTURE CALCULATIONS; EXPERIMENTAL DATA; FORWARD BIAS; INTERNAL BARRIERS; METAL-ORGANIC; MINORITY CARRIER; MOLECULAR CHANGES; MOLECULAR DIPOLE; MOLECULAR PROPERTIES; ORGANIC MONOLAYERS; SEMICONDUCTOR LINKS; SERIES RESISTANCES;

ALKYLATION; CHARGE TRANSFER; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HYDROCARBONS; ION EXCHANGE; MOLECULES; MONOLAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

SEMICONDUCTOR JUNCTIONS;

EID: 77953203556     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp101656t     Document Type: Article

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