On the roughness of perfectly flat H-Si(111) surfaces an atomic force microscopy approach

Surface Science

Volumn 411, Issue 1-2, 1998, Pages

  Ramonda, M ^a   Dumas, Ph ^a   Salvan, F ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Atomic force microscopy; Etching; Silicon; Surface roughening; Surface structure, morphology, roughness and topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTROCHEMISTRY; ETCHING; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTOR DOPING; SILICON WAFERS; STATISTICAL METHODS; SURFACE ROUGHNESS;

ELECTROCHEMICAL ETCHING;

SEMICONDUCTING SILICON;

EID: 0032141514     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00406-3     Document Type: Article

References (11)

1. W. Kern, RCA Rev. 39 (1978) 278.
2. P. Allongue, V. Kieling, H. Gerisher, Electrochim. Acta 40 (1995) 1353-1360.
3. G.J. Pietsch, U. Köhler, M. Henzler, J. Appl. Phys. 73 (1993) 4797.
4. K. Kaji, S.-L. Yau, K. Itaya, J. Appl. Phys. 78 (1995) 9.
5. P. Allongue, V. Kieling, H. Gerisher, J. Electrochem. Soc. 140 (1993) 1008-1026.
6. G.S. Higashi, Y.J. Chabal, G.W. Trucks, K. Raghavachari, Appl. Phys. Lett. 56 (1990) 656.
7. D. Graf, S. Bauer-Mayer, A. Schnegg, J. Vac. Sci. Technol. A 11 (1993) 940.
8. J.R. Roche, M. Ramonda, F. Thibaudau, Ph. Dumas, Ph. Mathiez, F. Salvan, P. Allongue, Microsc. Microanal. Microstruct. 5 (1994) 291-299.
9. W.M. Tong, R.S. Williams, Annu. Rev. Phys. Chem. 194 (1994) 401-438.
10. Ph. Dumas, B. Bouffakhreddine, C. Amra, O. Vatel, E. Andre, R. Galindo, F. Salvan, Europhys. Lett. 22 (1993) 717-722.
11. A.L. Barabasi, H.E. Stanley, Fractal Concepts in Surface Growth, Cambridge University Press, Cambridge, UK, 1995.