Electron transport properties and dielectric breakdown of alkyl monolayers chemisorbed on a highly doped n-type Si(111) surface

Japanese Journal of Applied Physics

Volumn 48, Issue 5, 2009, Pages 0550031-0550039

  Furuhashi, Masayuki ^a   Omura, Ayako ^a   Yamashita, Yoshiyuki ^a   Mukai, Kozo ^a   Yoshinobuy, Jun ^a   Akagilz, Kazuto ^a   Tsuneyuki, Shinji ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL CHAIN LENGTHS; ALKYL GROUPS; ALKYL MONOLAYERS; BOND-BREAKING; BREAKDOWN MECHANISM; BREAKDOWN VOLTAGE; CURRENT FLOWS; DIELECTRIC BREAKDOWNS; ELECTRON TRANSPORT; FIRST DERIVATIVE; FIRST-PRINCIPLES CALCULATION; MOLECULAR ORBITAL LEVELS; POSITIVE BIAS; SAMPLE BIAS; SI (1 1 1); SI SUBSTRATES; THERMIONIC EMISSION CURRENT; TUNNELING PROCESS; VALENCE-BAND DENSITIES;

ALKYLATION; CHAIN LENGTH; CHEMISORPTION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR ORBITALS; MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 68349105076     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.055003     Document Type: Article

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