What is the barrier for tunneling through alkyl monolayers? Results from n- And p-Si-Alkyl/Hg junctions

Advanced Materials

Volumn 19, Issue 3, 2007, Pages 445-450

  Salomon, Adi ^a   Boecking, Till ^c   Seitz, Oliver ^a   Markus, Tal ^a   Amy, Fabrice ^b   Chan, Calvin ^b   Zhao, Wei ^b   Cahen, David ^a   Kahn, Antoine ^b  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b Princeton University   (United States)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRODES; ELECTRON TRANSITIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

MOLECULAR LAYER WIDTH; MOLECULAR LENGTH; TRANSPORT BARRIERS;

MONOLAYERS;

EID: 34250327848     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200601729     Document Type: Article

References (33)

1. A. Salomon, D. Cahen, S. Lindsay, J. Tomfohr, V. Engelkes, C. D. Frisbie, Adv. Mater. 2003, 15, 1881.
2. D. Cahen, A. Kahn, Adv. Mater. 2003, 15, 271.
3. J. M. Beebe, V. B. Engelkes, L. L. Miller, C. D. Frisbie, J. Am. Chem. Soc. 2002, 124, 11 268.
4. The effect of the electrode's Fermi level position on charge transport through a molecular layer was studied also by Beebe et al. [3], by changing the electrode's material. Naturally, such a change also changes the interfacial chemical bond, which may affect the transport barrier height.
5. A. Salomon, T. Boecking, C. K. Chan, F. Amy, O. Girshevitz, D. Cahen, A. Kahn, Phys. Rev. Lett. 2005, 95, 266 807.
6. L. Segev, A. Salomon, A. Natan, D. Cahen, L. Kronik, A. Fabrice, C. K. Chan, A. Kahn, Phys. Rev. B: Condens. Matter 2006, 74, 165 323.
7. 9 eV is the HOMO/LUMO gap in the gas phase. For a monolayer, as for the bulk organic solid, the HOMO/LUMO gap will be smaller.
8. M. A. Green, F. D. King, J. Shewchun, Solid-State Electron. 1974, 17, 551.
9. The TE process is extremely sensitive to defects in the adsorbed molecular layer [10], and thus the corresponding current regime provides a clear indicator of monolayer quality and stability [11]. It can also give information about the actual electrical contact area [12] to yield reliable estimates of the current per molecule.
10. R. T. Tung, Mater. Sci. Eng. R 2001, 35, 1.
11. O. Seitz, T. Böcking, A. Salomon, J. J. Gooding, D. Cahen, Langmuir 2006, 22, 6915.
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York 1981.
13. M. R. Linford, P. Fenter, P. M. Eisenberger, C. E. D. Chidsey, J. Am. Chem. Soc. 1995, 117, 3145.
14. E. A. Rhoderick, R. H. Williams, Metal-semiconductor contacts, 2nd ed., Clarendon, Oxford 1988.
15. Y.-J. Liu, H.-Z. Yu, J. Phys. Chem. B 2003, 107, 7803.
16. C. Miramond, D. Vuillaume, J. Appl. Phys. 2004, 96, 1529.
17. E. J. Faber, L. C. P. M. de Smet, W. Olthuis, H. Zuilhof, E. J. R. Sudhoelter, P. Bergveld, A. van de Berg, ChemPhysChem 2005, 6, 2153.
18. L. Zhang, K. Wesley, S. Jiang, Langmuir 2001, 17, 6275.
19. D.-Q. Feng, D. Wisbey, Y. Tai, Y. B. Losovyj, M. Zharnikov, P. A. Dowben, J. Phys. Chem. B 2006, 110, 1095.
20. A. Haran, D. Waldeck, R. Naaman, E. Moons, D. Cahen, Science 1994, 265, 948.
21. The reverse-bias current for the n-Si junction is caused by electrons with sufficient thermal energy to tunnel into the Si conduction band.
22. J. G. Simmons, J. Appl. Phys. 1963, 34, 2581.
23. J. G. Simmons, J. Appl. Phys. 1964, 35, 2655.
24. The image force changes the barrier shape from rectangular to more rounded and reduces the barrier width with applied bias.
25. As expected, because of the limited validity of Equations 4 and 5, use of these parameters in the full Simmons model gave a reasonable fit only up to a few tens of millivolts of forward-bias voltage (Fig. S2 in Supporting Information).
26. J. Delhalle, J. M. Andre, S. Delhalle, J. J. Pireaux, R. Caudano, J. J. Verbist, J. Chem. Phys. 1974, 60, 595.
27. J. Tersoff, Phys. Rev. Lett. 1984, 52, 465.
28. F. Yndurain, J. Phys. C: Solid State Phys. 1971, 4, 2849.
29. H. Vazques, F. Flores, P. Oszwaldowski, R. Ortega, R. Perez, A. Kahn, Appl. Surf. Sci. 2004, 234, 107.
30. H. Vazques, P. Oszwaldowski, J. Pou, R. Ortega, R. Perez, F. Flores, A. Kahn, Europhys. Lett. 2004, 65, 802.
31. G. Nesher, A. Vilan, H. Cohen, D. Cahen, F. Amy, C. K. Chan, J. Hwang, A. Kahn, J. Phys. Chem. B 2006, 110, 14 363.
32. A. B. Sieval, A. L. Demirel, J. W. M. Nissink, M. R. Linford, J. H. van der Mass, W. H. de Jeu, H. Zuilhof, E. J. R. Sudhoelter, Langmuir 1998, 14, 1759.
33. F. Amy, C. K. Chan, W. Zhao, J. Hyung, M. Ono, T. Sueyoshi, S. Kera, G. Nesher, A. Salomon, L. Segev, O. Seitz, H. Shpaisman, A. Schöll, M. Haeming, D. Cahen, L. Kronik, N. Ueno, E. Umbach, A. Kahn, J. Phys. Chem. B 2006, 110, 21826.