Correlation betweentwo time-dependent dielectric breakdown measurements for the gate oxides damaged by plasma processing

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 160-164

  Eriguchi, Koji ^a,b   Kosaka, Yukiko ^a,b  

^a PANASONIC CORPORATION   (Japan)

^b Advanced Technology Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC VARIABLES MEASUREMENT; PLASMA APPLICATIONS;

CONSTANT CURRENT INJECTION; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

MOSFET DEVICES;

EID: 0031672298     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658825     Document Type: Article

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