Impacts of Antenna Layout Enhanced Charging Damage on MOSFET Reliability and Performance

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 727-730

  Yamada, Takayuki ^a   Eriguchi, Koji ^a   Kosaka, Yukiko ^a   Hatada, Kenzo ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; PLASMA APPLICATIONS; PLASMA DEVICES; ANTENNAS; CRYSTAL DEFECTS; CURRENT DENSITY; DEGRADATION; GATES (TRANSISTOR); OXIDES; REACTIVE ION ETCHING; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR PLASMAS;

ANTENNA CONFIGURATIONS; ANTENNA SURFACES; BI-DIRECTIONAL; CHARGING DAMAGE; GATE OXIDE; INDUCED DAMAGE; MOSFET PERFORMANCE; MOSFET RELIABILITY; MOSFETS; Q BD;

ANTENNAS; MOSFET DEVICES;

ANTENNA LAYOUT; DIODE ANTENNA; ELECTRON INJECTION; GATE OXIDES; MOSFET RELIABILITY; PLASMA DAMAGE; PLASMA PROCESSING;

EID: 0030393758     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554083     Document Type: Conference Paper

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