Comparative study of plasma source-dependent charging polarity in metal-oxide-semiconductor field effect transistors with high-k and SiO 2 gate dielectrics

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2369-2374

  Eriguchi, Koji ^a   Kamet, Masayuki ^a   Hamada, Daisuke ^a   Okada, Kenji ^b   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Charging; Constant current stress; Gate leakage; High k; MOSFET; Plasma induced damage; SiO2; Threshold voltage; Trap

Indexed keywords

ARGON; CHARGE TRAPPING; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GAS MIXTURES; GATES (TRANSISTOR); HAFNIUM; INJECTION (OIL WELLS); LOGIC GATES; MOS CAPACITORS; MOSFET DEVICES; PLASMA DIAGNOSTICS; PLASMA SOURCES; PLASMAS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; TRANSISTORS;

CHARGING; CONSTANT CURRENT STRESS; GATE LEAKAGE; HIGH-K; MOSFET; PLASMA-INDUCED DAMAGE; SIO2; TRAP;

GATE DIELECTRICS;

EID: 54249107591     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2369     Document Type: Article

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