Reconsideration of hydrogen release at ultra thin gate oxide interface

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1456-1460

  Mitani, Yuichiro ^a   Satake, Hideki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Deuterium; Hydrogen; Interface state; MOSFET; NBTI; Reliability

Indexed keywords

ATOMS; DEUTERIUM; ELECTRON SCATTERING; ELECTRONS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HYDROGEN; MOSFET DEVICES; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ENERGETIC ELECTRONS; GATE ELECTRODES; H BONDS; HYDROGEN RELEASES; INJECTED ELECTRONS; INTERFACE STATE; INTERFACE TRAP GENERATIONS; ISOTOPE EFFECTS; MOSFET; NBTI; NEGATIVE BIASSED; OXIDE VOLTAGES; PMOSFETS; STRESS VOLTAGES; ULTRA THIN GATES;

GATE DIELECTRICS;

EID: 54349122810     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1456     Document Type: Article

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