Topographic dependence of plasma charging induced device damage

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 41-44

  Vahedi, Vahid ^a   Benjamin, Neil ^a   Perry, Andrew ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GATES (TRANSISTOR); IONS; MATHEMATICAL MODELS; MOS DEVICES; OXIDES; PLASMA DENSITY; SURFACE STRUCTURE;

PLASMA CHARGING INDUCED DEVICE DAMAGE;

PLASMA ETCHING;

EID: 0030704009     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)