A comprehensive model for plasma damage enhanced transistor reliability degradation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 364-369

  Weng, W T ^a,b   Oates, A S ^a   Huang, Tiao Yuan ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DAMAGE DETECTION; FAILURE ANALYSIS; RELIABILITY THEORY; TRANSISTORS;

CARRIER RELIABILITY; FAILURE DISTRIBUTIONS; PLASMA DAMAGE; TRANSISTOR RELIABILITY DEGRADATION;

PLASMA THEORY;

EID: 34548790748     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369916     Document Type: Conference Paper

References (32)

1. S. Krishnan et al., Proc. Int. Elect. Dev. Meeting, 1998, p.601.
2. P. W. Mason et al., Proc. Int. Sym. on P2ID, 2000, p. 2
3. A. Martin et al., Proc. Int. Rel. Phys. Symp., 2006, p. 719.
4. Anand T. Krishnan et al., Proc. Int. Elect. Dev. Meeting, 2001, p.865.
5. J. Ackaert et al., Int. Sym. on P2ID, 2002, p. 45
6. K. P. Cheung. Int. Rel. Phys. Symp., 2006, p. 360.
7. S. Rangan et al., Int. Rel. Phys. Symp., 1999, p. 370.
8. D. Varghese et al., Elect. Dev. Lett., Vol 26 NO 8 Aug p.56, 2005
9. Xiaoyu Li et al., Elect. Dev. Lett., Vol 14, NO, 2, Feb p. 91, 1993
10. K.P Cheung et al., Proc. Int. Sym. on P2ID 1997 p186
11. B. P. Linder et al., Proc. Int. Sym. on P2ID 1998, p.42.
12. A. T. Krishnan et al., Proc. Int. Elect. Dev. Meeting 2002, p. 525.
13. X. Li et al, Elect. Dev. Lett., vol. 22 p. 285, 1994
14. X. Li et al, Elect. Dev. Lett., vol. 30 p. 367, 1994
15. Souvik Mahapatra et al., Trans. on Elect. Dev., Vol 51, NO, 9, Sep. p. 1371, 2004
16. A.E. Islam et al., Proc. Int. Elect. Dev. Meeting, 2006 Session 12.4 p. 1-4
17. Sunway Chen et al., Int. Sym. onP2ID, 2002, p.76
18. Kaizadd R. Mistry et al., Proc. Int. Rel. Phys. Symp., 1994, p. 42
19. Eiji TAKEDA et al., Hot carrier effect in MOS Devices. New York: Academic press, 1995 chapter 3 p70
20. K.P cheung Proc. Int. Rel. Phys. Symp., 1995, p.83
21. J.R. Shih et al., Proc. Int. Rel. Phys. Symp., 2001, p.406
22. Anand T. Krishnan et al., Proc. Int. Elect. Dev. Meeting 2003 p.28
23. Sung -Hyung Park et al., Int. Sym. on P2ID, 2001, p124
24. Ken'ichi Uwasawa et al., Proc. Int. Elect. Dev. Meeting, 1995, p.87
25. Antreas Martin et. al., Proc. Int. Rel. Phys. Symp., 2006 p719
26. Vahid Vahedi et al., Int. Sym. on P2ID, 1997, p. 41
27. Gyeong S. Hwang et al., Int. Sym. on P2ID, 1997, p.63
28. Doug P. Verret et al., Trans. on Elect. Dev., Vol. 49, NO. 7 July p.1274, 2002
29. Geert Van den bosh et al., Int. Sym. on P2ID, 2002, p.37
30. J. H. Stathis, et al. Proc. Int. Elec. Dev. Meeting, 1998, p.167
31. R. Degraeve et al Microelectronics and Reliability 40(4-5) p.697, 2000
32. W. Lai et al., Proc. Int. Rel. Phys. Symp., 2006, p370