Discrete-dopant-induced timing fluctuation and suppression in nanoscale CMOS circuit

IEEE Transactions on Circuits and Systems II: Express Briefs

Volumn 56, Issue 5, 2009, Pages 379-383

  Li, Yiming ^a,b   Hwang, Chih Hong ^a   Li, Tien Yeh ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Fluctuation suppression technique; Modeling and simulation; Nanometer scale metal oxide semiconductor field effect transistor (MOSFET) device and circuit; Random dopant effect; Timing fluctuation

Indexed keywords

CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; METALLIC COMPOUNDS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS;

MODEL AND SIMULATION; NANO-METER SCALE; RANDOM DOPANT EFFECTS; SUPPRESSION TECHNIQUE; TIMING FLUCTUATION;

TIMING CIRCUITS;

EID: 67349244878     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2009.2019168     Document Type: Article

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