High drain current density and reduced gate leakage current in channel-doped AlGaNGaN heterostructure field-effect transistors with Al 2 O 3 Si 3 N 4 gate insulator

Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

  Maeda, Narihiko ^a   Wang, Chengxin ^a   Enoki, Takatomo ^a   Makimoto, Toshiki ^b   Tawara, Takehiko ^b  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPED CHANNEL; DRAIN CURRENT DENSITY; GATE INSULATOR; GATE LEAKAGE CURRENT;

CURRENT DENSITY; DIELECTRIC PROPERTIES; ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

HETEROJUNCTIONS;

EID: 24144463823     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2012535     Document Type: Article

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