Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 579-583

  Uren, M J ^a   Lee, D ^a   Hughes, B T ^a   Parmiter, P J M ^a   Birbeck, J C ^a   Balmer, R ^a   Martin, T ^a   Wallis, R H ^b   Jones, S K ^b  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^b Marconi Caswell Ltd   (United Kingdom)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices

Indexed keywords

CARRIER CONCENTRATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HETEROSTRUCTURE WAFERS;

FIELD EFFECT TRANSISTORS;

EID: 0035451938     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01300-8     Document Type: Article

References (7)