LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: Application to HEMT devices

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 305-311

  Di Forte Poisson, M A ^a   Magis, M ^a   Tordjman, M ^a   Aubry, R ^a   Sarazin, N ^a   Peschang, M ^a   Morvan, E ^a   Delage, S L ^a   Di Persio, J ^b   Quere R ^c   Grimbert, B ^d   Hoel, V ^d   Delos, E ^d   Ducatteau, D ^d   Gaquiere, C ^d  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIV LILLE   (France)

^c IRCOM CNRS   (France)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

A1. Defects; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Field effect transistors; B3. Heterojunction semiconductor devices; B3. High electron mobility transistors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

HETEROJUNCTION SEMICONDUCTOR DEVICES; SEMICONDUCTING III-V MATERIALS; TRIMETHYLALUMINIUM (TMAL); TRIMETHYLGALLIUM (TMG);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 9944236724     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.121     Document Type: Conference Paper

References (3)

1. J.R. Shealy, V. Kaper, V. Tilak, T. Prunty, J.A. Smart, B. Green, L.F. Eastman, J. Phys. Condens. Matter 14 (2002) 3499-3509.
2. M.-A. di Forte-Poisson, A. Romann, M. Tordjman, M. Magis, J. Di Persio, Ch. Jacques, P. Vicente, J. Crystal Growth 248 (2003) 533-538.
3. M.-A. di Forte-Poisson, M. Magis, M. Tordjman, R. Aubry, M. Peschang, S.L. Delage, J. Di Persio, B. Grimbert, V. Hoel, E. Delos, D. Ducatteau, C. Gaquière, Proceedings of MRS Fall Meeting, Boston, 2003.