Effects of nitrogen vacancy on optical properties of nitride semiconductors

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 570-574

  Yamaguchi, Eiichi ^a   Junnarkar, Mahesh R ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Band structure; Deep level; Green's function; Localization; Nitride semiconductor; Stokes shift

Indexed keywords

BAND STRUCTURE; GREEN'S FUNCTION; MATHEMATICAL MODELS; NITROGEN; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS;

NITRIDE SEMICONDUCTORS; NITROGEN VACANCY;

NITRIDES;

EID: 0032092951     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00202-4     Document Type: Article

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