Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO 2 and Si 3N 4 dielectrics

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2379-2383

  Bae, Choelhwyi ^a   Krug, Cristiano ^a   Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPPING; FLATBAND VOLTAGE; SPATIAL DISTRIBUTION; VOLTAGE SHIFT;

ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; GALLIUM NITRIDE; INTERFACES (MATERIALS); OXIDES; PASSIVATION; SILICON COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 10244239353     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1806439     Document Type: Article

References (22)

1. H. C. Casey, G. G. Fountain, R. G. Alley, B. P. Keller, and S. P. Den-Baars, Appl. Phys. Lett. 68, 1850 (1996).
2. B. Gaffey, L. J. Guido, X. W. Wang, and T. P. Ma, IEEE Trans. Electron Devices 48, 458 (2001).
3. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21, 1828 (2003).
4. C. Bae and G. Lucovsky, J. Vac. Sci. Technol. A (to be published).
5. C. Bae and G. Lucovsky, J. Vac. Sci. Technol. A (to be published).
6. K. Matocha, T. P. Chow, and R. J. Gutmann, IEEE Electron Device Lett. 23, 79 (2002).
7. P. Chen, W. Wang, S. J. Chua, and Y. D. Zheng, Appl. Phys. Lett. 79, 3530 (2001).
8. T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 93, 3995 (2003).
9. T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 94, 3949 (2003).
10. T. E. Cook Jr., C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 94, 7155 (2003).
11. K. Matocha, T. P. Chow, and R. J. Gutmann, IEEE Trans. Electron Devices 50, 1200 (2003).
12. V. J. Kapoor and R. A. Tun, J. Appl. Phys. 52, 311 (1981).
13. C. Bae, C. Krug, G. Lucovsky, A. Chakraborty, and U. Mishra, J. Appl. Phys. 96, 2674 (2004).
14. G. Lucovsky, IBM J. Res. Dev. 43, 301 (1999).
15. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).
16. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
17. D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, J. Appl. Phys. 73, 5058 (1993).
18. R. S. Johnson, G. Lucovsky, and I. Baumvol, J. Vac. Sci. Technol. A 19, 1353 (2001).
19. R. S. Johnson, J. G. Hong, C. Hinkle, and G. Lucovsky, J. Vac. Sci. Technol. B 20, 1126 (2002).
20. G. Lueovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Phillips, Appl. Phys. Lett. 74, 2005 (1999).
21. G. Lucovsky and J. C. Phillips, J. Non-Cryst. Solids 227, 1221 (1998).
22. R. Therrien, G. Lucovsky, and R. Davis, Appl. Surf. Sci. 166, 513 (2000).