Ge/III-V channel engineering for future CMOS

ECS Transactions

Volumn 19, Issue 5, 2009, Pages 9-20

  Takagi, S ^a,b   Sugiyama, M ^a   Yasuda, T ^b   Takenaka, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOS DEVICES;

BASIC CONCEPTS; CHANNEL ENGINEERING; CHANNEL MATERIALS; CRITICAL ISSUES; HETEROGENEOUS INTEGRATION; KEY TECHNOLOGIES; MOBILITY ENHANCEMENT; PRESENT STATUS;

MOSFET DEVICES;

EID: 77149175996     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3119523     Document Type: Conference Paper

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