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Volumn 84, Issue 9-10, 2007, Pages 2138-2141

Compound semiconductor MOSFETs

Author keywords

Compound semiconductors; GaAs gate dielectric; III V MOSFETs

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34248654881     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.018     Document Type: Article
Times cited : (14)

References (17)
  • 13
    • 34248651344 scopus 로고    scopus 로고
    • M. Passlack, Z. Yu, R. Droopad, J. Abrokwah, D. Braddock, S. Yi, M. Hale, J. Sexton, A. Kummel, in: W. Cai, ed., III-V Semiconductor Heterostructures: Physics and Devices, (2003) 327-355.
  • 17
    • 34248654143 scopus 로고    scopus 로고
    • M. Passlack, in Materials Fundamentals of Gate Dielectrics, edited by A.A. Demkov and A. Navrotsky, Springer, New York (2005) 403.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.