Effects of interfacial layers formed by plasma oxidation and nitridation on HfO2/Ge-MIS properties

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 551-558

  Maeda, T ^a   Morita, Y ^a   Nishizawa, M ^a   Takagi, S ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; HAFNIUM COMPOUNDS; LOW TEMPERATURE OPERATIONS; OXIDATION; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACIAL LAYERS; NITRIDATION; PLASMA OXIDATION;

INTERFACES (MATERIALS);

EID: 33847005459     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355852     Document Type: Conference Paper

References (19)

1. M. L. Lee, Z.-Y. Cheng, C. W. Leitz, A. J. Pitera, T. A. Langdo, M. T. Currie, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis, Appl. Phys. Lett. 79, 3344 (2001).
2. S. Takagi, VLSI Sympo. Tech. Dig. 2003, 115 (2003).
3. D. J. Hymes, and J. J. Rosenberg, J. Electrochem. Soc., 135, 961 (1988).
4. J. J. Rosenberg and S. C. Martin, IEEE Electron Device Lett., 9, 639 (1988).
5. T. N. Jackson, C. M. Ransom, and J. F. DeGelormo, IEEE Electron Device Lett., 12, 605 (1991).
6. C. O. Chui, F. Ito, and K. C. Saraswat, IEEE Electron Device Lett., 25, 613 (2004).
7. H. Shang, H. Okorn-Schmidt, K. K. Chan, M. Copel, J. A. Ott, P. M. Kozlowski, S. E. Steen, S. A. Cordes, H.-S. P. Wong, E. C. Jones, and W. E. Haensch, Tech. Dig.-Int. Electron Devices Meet. 2002, 441 (2002).
8. B. De Jaeger, R. Bonzom, F. Leys, O. Richard, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, G. Raskin, F. Letertre, T. Billon, M. Meuris, and M. Heyns, Microelectron. Eng., 80, 26 (2005).
9. H. Shang, K. L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M. Ieong, H.-S. P. Wong, K. Guarini, and W. Haensch, IEEE Electron Device Lett., 25, 135 (2004).
10. S. J. Whang, S. J. Lee, F. Gao, N. Wu, C. X. Zhu, J. S. Pan, L. J. Tan, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet., 2004, 307 (2004).
11. Y. Fukuda, T. Ueno, S. Hirono and S. Hashimoto, Japan. J. Appl. Phys., 44, 6981 (2005).
12. Y. Wang, Y. Z. Hu, and E. A. Irene, J. Vac. Sci. Technol. A, 12, 1309 (1994).
13. T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi, Appl. Phys. Lett., 85, 3181 (2004).
14. T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi, J. Appl. Phys., (2006) in press.
15. K. Prabhakarana, and T. Ogino, Surf. Sci., 325, 263 (1995).
16. H. Itoh, M. Nagamine, H. Satake and A. Toriumi, Microelectron. Eng., 48, 71 (1999).
17. E. H. Nicollian andA. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1969).
18. N. Wu, Q. Zhang, C. Zhu, C. C. Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, B. J. Cho, A. Chin, D. L. Kwong, A. Y. Du, C. H. Tung, and N. Balasubramanian, Appl. Phys. Lett., 84, 3741 (2004).
19. S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, T. Chiarella, S. De Gendt, B. De Jaeger, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, and M. Heyns, Appl. Phys. Lett., 85, 3824 (2004).