SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

(8) Chang, C H a Chiou, Y K a Chang, Y C a Lee, K Y a Lin, T D a Wu, T B a Hong, M a Kwo, J a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CLEANING; DIELECTRIC MATERIALS; ELECTRODEPOSITION; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOLECULAR STRUCTURE;

ATOMIC LAYER DEPOSITION; CAPACITANCE-VOLTAGE RELATIONS; LIGAND EXCHANGE; SELF-CLEANING PHENOMENON;

HAFNIUM COMPOUNDS;

EID: 33845892121 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2405387 Document Type: Article

Times cited : (143)

References (18)

1
- 33745610211
- Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett. 88, 263518 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 263518
- Xuan, Y.¹ Lin, H.C.² Ye, P.D.³ Wilk, G.D.⁴

2
- 29144509765
- M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 87, 252104 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 252104
- Huang, M.L.¹ Chang, Y.C.² Chang, C.H.³ Lee, Y.J.⁴ Chang, P.⁵ Kwo, J.⁶ Wu, T.B.⁷ Hong, M.⁸

3
- 0000465918
- M. Passlack, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 68, 1099 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1099
- Passlack, M.¹ Hong, M.² Mannaerts, J.P.³

4
- 0033583043
- M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science 283, 1897 (1999).
- (1999) Science , vol.283 , pp. 1897
- Hong, M.¹ Kwo, J.² Kortan, A.R.³ Mannaerts, J.P.⁴ Sergent, A.M.⁵

5
- 0037766787
- P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, IEEE Electron Device Lett. 24, 209 (2003).
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 209
- Ye, P.D.¹ Wilk, G.D.² Kwo, J.³ Yang, B.⁴ Gossmann, H.-J.L.⁵ Frei, M.⁶ Chu, S.N.G.⁷ Mannaerts, J.P.⁸ Sergent, M.⁹ Hong, M.¹⁰ Ng, K.K.¹¹ Bude, J.¹²

6
- 33745801289
- M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 89, 012903 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 012903
- Huang, M.L.¹ Chang, Y.C.² Chang, C.H.³ Lin, T.D.⁴ Kwo, J.⁵ Wu, T.B.⁶ Hong, M.⁷

7
- 17644444907
- W. Tsai, L.-Å. Ragnarsson, L. Pantisano, P. J. Chen, B. Onsia, T. Schram, E. Cartier, A. Kerber, E. Young, M. Caymax, S. De Gendt, and M. Heyns, Tech. Dig. - Int. Electron Devices Meet. 2003, 311.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 311
- Tsai, W.¹ Ragnarsson, L.-Å.² Pantisano, L.³ Chen, P.J.⁴ Onsia, B.⁵ Schram, T.⁶ Cartier, E.⁷ Kerber, A.⁸ Young, E.⁹ Caymax, M.¹⁰ De Gendt, S.¹¹ Heyns, M.¹²

8
- 20844440321
- M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. 86, 152904 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 152904
- Frank, M.M.¹ Wilk, G.D.² Starodub, D.³ Gustafsson, T.⁴ Garfunkel, E.⁵ Chabal, Y.J.⁶ Grazul, J.⁷ Muller, D.A.⁸

9
- 85027474854
- W. Stamm and A. Breindel, Angew. Chem., Int. Ed. Engl. 3, 66 (1964).
- (1964) Angew. Chem., Int. Ed. Engl. , vol.3 , pp. 66
- Stamm, W.¹ Breindel, A.²

10
- 0000090678
- D. K. Dileep, L. K. Krannich, and C. L. Watkins, Inorg. Chem. 29, 3502 (1990).
- (1990) Inorg. Chem. , vol.29 , pp. 3502
- Dileep, D.K.¹ Krannich, L.K.² Watkins, C.L.³

11
- 0028761916
- H. Asahi, X. F. Liu, K. Inoue, D. Marx, K. Asami, K. Miki, and S. Gonda, J. Cryst. Growth 145, 668 (1994).
- (1994) J. Cryst. Growth , vol.145 , pp. 668
- Asahi, H.¹ Liu, X.F.² Inoue, K.³ Marx, D.⁴ Asami, K.⁵ Miki, K.⁶ Gonda, S.⁷

12
- 0032633349
- H. Sugiura, M. Mitsuhara, S. Kondo, and K. Tsuzuki, J. Cryst. Growth 201, 594 (2001).
- (2001) J. Cryst. Growth , vol.201 , pp. 594
- Sugiura, H.¹ Mitsuhara, M.² Kondo, S.³ Tsuzuki, K.⁴

13
- 0030190175
- T. J. Whitaker, T. Martin, A. D. Johnson, A. J. Pidduck, and J. P. Newey, J. Cryst. Growth 164, 125 (1996).
- (1996) J. Cryst. Growth , vol.164 , pp. 125
- Whitaker, T.J.¹ Martin, T.² Johnson, A.D.³ Pidduck, A.J.⁴ Newey, J.P.⁵

14
- 36549095558
- C. J. Sandroff, M. S. Hegde, L. A. Farrow, C. C. Chang, and J. P. Harbison, Appl. Phys. Lett. 54, 362 (1989).
- (1989) Appl. Phys. Lett. , vol.54 , pp. 362
- Sandroff, C.J.¹ Hegde, M.S.² Farrow, L.A.³ Chang, C.C.⁴ Harbison, J.P.⁵

15
- 0037320050
- K. S. K. Kwa, S. Chattopadhyay, N. D. Jankovic, S. H. Olsen, L. S. Driscoll, and A. G. O'Neill, Semicond. Sci. Technol. 18, 82 (2003).
- (2003) Semicond. Sci. Technol. , vol.18 , pp. 82
- Kwa, K.S.K.¹ Chattopadhyay, S.² Jankovic, N.D.³ Olsen, S.H.⁴ Driscoll, L.S.⁵ O'Neill, A.G.⁶

16
- 33644616479
- L. J. Huang, W. M. Lau, S. lngrey, D. Landheer, and J.-P. Nol, J. Appl. Phys. 76, 8192 (1994).
- (1994) J. Appl. Phys. , vol.76 , pp. 8192
- Huang, L.J.¹ Lau, W.M.² Lngrey, S.³ Landheer, D.⁴ Nol, J.-P.⁵

17
- 0008229760
- Z. H. Lu, D. Landheer, J.-M. Baribeau, L. J. Huang, and W. W. Lau, Appl. Phys. Lett. 64, 1702 (1994).
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1702
- Lu, Z.H.¹ Landheer, D.² Baribeau, J.-M.³ Huang, L.J.⁴ Lau, W.W.⁵

18
- 4444335463
- Z. Luo and T. P. Ma, IEEE Electron Device Lett. 25, 655 (2004).
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 655
- Luo, Z.¹ Ma, T.P.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.