-
1
-
-
0034429730
-
CMOS circuit technology for sub-ambient temperature operation
-
Aller, I., Bernstein, K., Ghoshal, U., Schettler, H., Schuster, S., Taur, Y., and Terreiter, O. 2000. CMOS circuit technology for sub-ambient temperature operation. In Proceedings of the International Solid-State Circuits Conference. 214-215.
-
(2000)
Proceedings of the International Solid-State Circuits Conference
, pp. 214-215
-
-
Aller, I.1
Bernstein, K.2
Ghoshal, U.3
Schettler, H.4
Schuster, S.5
Taur, Y.6
Terreiter, O.7
-
4
-
-
0035307248
-
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density-gradient simulation study.
-
(Apr.)
-
Asenov, A., Slavcheva, G., Brown, A. R., Davies, J. H., and Saini, S. 2001. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density-gradient simulation study. IEEE Trans. Elect. Dev. 48, 4 (Apr.), 722-729.
-
(2001)
IEEE Trans. Elect. Dev.
, vol.48
, Issue.4
, pp. 722-729
-
-
Asenov, A.1
Slavcheva, G.2
Brown, A.R.3
Davies, J.H.4
Saini, S.5
-
5
-
-
0842288145
-
A self-consistent junction temperature estimation methodology for nanometer scale ICs with implications for performance and thermal management
-
(Dec.)
-
Banerjee, K., Lin, S.-C., Keshavarzi, A., Narendra, S., and De, V. 2003. A self-consistent junction temperature estimation methodology for nanometer scale ICs with implications for performance and thermal management. In Proceedings of the International Electron Devices Meeting (Dec.). 36.7.1-36.7.4.
-
(2003)
Proceedings of the International Electron Devices Meeting
-
-
Banerjee, K.1
Lin, S.-C.2
Keshavarzi, A.3
Narendra, S.4
De, V.5
-
7
-
-
0026853681
-
Low-power CMOS digital design
-
(Apr.)
-
Chandrakasan, A., Sheng, S., and Brodersen, R. W. 1992. Low-power CMOS digital design. IEEE J. Solid-State Circ. 27 (Apr.), 473-484.
-
(1992)
IEEE J. Solid-State Circ.
, vol.27
, pp. 473-484
-
-
Chandrakasan, A.1
Sheng, S.2
Brodersen, R.W.3
-
8
-
-
0042009674
-
Silicon nano-transistors for logic applications
-
(July)
-
Chau, R., Boyanov, B., Doyle, B., Doczy, M., Datta, S., Hareland, S., Jin, B., Kavalieros, J., and Metz, M. 2003. Silicon nano-transistors for logic applications. Physica E. Low-Dimen. Syst. Nanostruct. 19, 1-2 (July), 1-5.
-
(2003)
Physica E. Low-Dimen. Syst. Nanostruct.
, vol.19
, Issue.1-2
, pp. 1-5
-
-
Chau, R.1
Boyanov, B.2
Doyle, B.3
Doczy, M.4
Datta, S.5
Hareland, S.6
Jin, B.7
Kavalieros, J.8
Metz, M.9
-
9
-
-
2942702306
-
High-k/metal-gate stack and its MOSFET characteristics
-
(June)
-
Chau, R., Datta, S., Doczy, M., Doyle, B., Kavalieros, J., and Metz, M. 2004. High-k/metal-gate stack and its MOSFET characteristics. IEEE Electron Dev. Lett. 25 (June), 408-410.
-
(2004)
IEEE Electron Dev. Lett.
, vol.25
, pp. 408-410
-
-
Chau, R.1
Datta, S.2
Doczy, M.3
Doyle, B.4
Kavalieros, J.5
Metz, M.6
-
10
-
-
0028745324
-
CMOS technology scaling for low voltage low power applications
-
IEEE Computer Society Press, Los Alamitos, Calif.
-
Chen, Z., Shott, J., Burr, J., and Plummer, J. D. 1994. CMOS technology scaling for low voltage low power applications. In Proceedings of the IEEE Symposium on Low Power Electrons. IEEE Computer Society Press, Los Alamitos, Calif. 56-57.
-
(1994)
Proceedings of the IEEE Symposium on Low Power Electrons.
, pp. 56-57
-
-
Chen, Z.1
Shott, J.2
Burr, J.3
Plummer, J.D.4
-
12
-
-
85024247165
-
-
United States Patent, Patent number: 6,166,584. Filed: June 1997, Issued: Dec. 2000
-
De, V. 2000. Forward biased MOS circuits. United States Patent, Patent number: 6,166,584. Filed: June 1997, Issued: Dec. 2000.
-
(2000)
Forward biased MOS circuits
-
-
De, V.1
-
16
-
-
85024283647
-
-
Research available at www.stanford.edu/group/microheat/hex.html
-
Goodson, K. Research available at www.stanford.edu/group/microheat/hex.html.
-
-
-
Goodson, K.1
-
17
-
-
85024250070
-
-
http://www.intel.com/pressroom/archive/ speeches/grove_20021210.pdf
-
Grove, A. 2002. IEDM2002 Keynote Luncheon Speech. http://www.intel.com/pressroom/archive/ speeches/grove_20021210.pdf.
-
(2002)
IEDM2002 Keynote Luncheon Speech
-
-
Grove, A.1
-
18
-
-
0000901940
-
Fundamental limitations in microelectronics I: MOS technology
-
(July)
-
Hoeneisen, B. and Mead, C. A. 1972. Fundamental limitations in microelectronics I: MOS technology. Solid-State Electron. 15 (July), 819-829.
-
(1972)
Solid-State Electron.
, vol.15
, pp. 819-829
-
-
Hoeneisen, B.1
Mead, C.A.2
-
19
-
-
0034622998
-
Quantized phonon spectrum of single-wall carbon nanotubes.
-
(Sept.)
-
Hone, J., Batlogg, B., Benes, Z., Johnson, A. T., and Fischer, J. E. 2000. Quantized phonon spectrum of single-wall carbon nanotubes. Science 289 (Sept.), 1730-1733.
-
(2000)
Science
, vol.289
, pp. 1730-1733
-
-
Hone, J.1
Batlogg, B.2
Benes, Z.3
Johnson, A.T.4
Fischer, J.E.5
-
20
-
-
0027698768
-
Switched-source-impedance CMOS circuit for low standby sub-threshold current giga-scale LSI's
-
(Nov.)
-
Horiguchi, M., Sakata, T., and Itoh, K. 1993. Switched-source-impedance CMOS circuit for low standby sub-threshold current giga-scale LSI's. IEEE J. Solid-State Circ. 28 (Nov.), 1131-1135.
-
(1993)
IEEE J. Solid-State Circ.
, vol.28
, pp. 1131-1135
-
-
Horiguchi, M.1
Sakata, T.2
Itoh, K.3
-
21
-
-
0033329310
-
Sub 50-nm FinFET: PMOS
-
Huang, X., Lee, W.-C., Kuo, C., Hisamoto, D., Chang, L., Kedzierski, J., Anderson, E., Takeuchi, H., Choi, Y.-K., Asano, K., Subramanian, V., King, T.-J., Bokor, J., and Hu, C. 1999. Sub 50-nm FinFET: PMOS. IEDM Tech. Dig. 67-70.
-
(1999)
IEDM Tech. Dig.
, pp. 67-70
-
-
Huang, X.1
Lee, W.-C.2
Kuo, C.3
Hisamoto, D.4
Chang, L.5
Kedzierski, J.6
Anderson, E.7
Takeuchi, H.8
Choi, Y.-K.9
Asano, K.10
Subramanian, V.11
King, T.-J.12
Bokor, J.13
Hu, C.14
-
22
-
-
85024249724
-
-
http://www.intel.com/research/silicon/mooreslaw.htm
-
Intel. http://www.intel.com/research/silicon/mooreslaw.htm.
-
-
-
Intel1
-
24
-
-
0034230287
-
Dual-threshold voltage techniques for low power digital circuits
-
(July)
-
Kao, J. and Chandrakasan, A. 2000. Dual-threshold voltage techniques for low power digital circuits. IEEE J. Solid-State Circ. 35 (July), 1009-1018.
-
(2000)
IEEE J. Solid-State Circ.
, vol.35
, pp. 1009-1018
-
-
Kao, J.1
Chandrakasan, A.2
-
26
-
-
0027700917
-
Sub-threshold current reduction for decoded-driver by self-reverse biasing
-
(Nov.)
-
Kawahara, T., Horiguchi, M., Kawajiri, Y., Kitsukawa, G., and Kure, T. 1993. Sub-threshold current reduction for decoded-driver by self-reverse biasing. IEEE J. Solid-State Circ. 28 (Nov.), 1136-1144.
-
(1993)
IEEE J. Solid-State Circ.
, vol.28
, pp. 1136-1144
-
-
Kawahara, T.1
Horiguchi, M.2
Kawajiri, Y.3
Kitsukawa, G.4
Kure, T.5
-
27
-
-
76249122899
-
Improving throughput across the factory life-cycle
-
Kempf, K. G. 1998. Improving throughput across the factory life-cycle. Intel Tech. J. Q4.
-
(1998)
Intel Tech. J.
, vol.Q4
-
-
Kempf, K.G.1
-
28
-
-
0034878684
-
Effectiveness of reverse body bias for leakage control, in scaled dual Vt CMOS ICs
-
(Aug.)
-
Keshavarzi, A., Ma, S., Narendra, S., Bloechel, B., Mistry, K., Ghani, T., Borkar, S., and De, V. 2001. Effectiveness of reverse body bias for leakage control, in scaled dual Vt CMOS ICs. In Proceedings of the International Symposium Low Power Electronics and Design. (Aug.), 207-212.
-
(2001)
Proceedings of the International Symposium Low Power Electronics and Design.
, pp. 207-212
-
-
Keshavarzi, A.1
Ma, S.2
Narendra, S.3
Bloechel, B.4
Mistry, K.5
Ghani, T.6
Borkar, S.7
De, V.8
-
29
-
-
0034429682
-
Threshold canceling logic (TCL): A post-CMOS logic family scalable down to 0.02 mm
-
Kohno, I., Sano, T., Katoh, N., and Yano, K. 2000. Threshold canceling logic (TCL): A post-CMOS logic family scalable down to 0.02 mm. In Proceedings of the International Solid-State Circuits Conference. 218-219.
-
(2000)
Proceedings of the International Solid-State Circuits Conference
, pp. 218-219
-
-
Kohno, I.1
Sano, T.2
Katoh, N.3
Yano, K.4
-
30
-
-
0035505541
-
A multigigahertz clocking scheme for Intel(r) Pentium(r) 4 microprocessor
-
(Nov.)
-
Kurd, N. A., Barkarullah, J. S., Dizon, R. O., Fletcher, T. D., and Madland, P. D. 2001. A multigigahertz clocking scheme for Intel(r) Pentium(r) 4 microprocessor. IEEE J. Solid-State Circ. 36 (Nov.), 1647-1653.
-
(2001)
IEEE J. Solid-State Circ.
, vol.36
, pp. 1647-1653
-
-
Kurd, N.A.1
Barkarullah, J.S.2
Dizon, R.O.3
Fletcher, T.D.4
Madland, P.D.5
-
31
-
-
0030285492
-
2, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme.
-
(Nov.)
-
2, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme. IEEE J. Solid-State Circ. 31 (Nov.), 1770-1779.
-
(1996)
IEEE J. Solid-State Circ.
, vol.31
, pp. 1770-1779
-
-
Kuroda, T.1
Fujita, T.2
Mita, S.3
Nagamatsu, T.4
Yoshioka, S.5
Suzuki, K.6
Sano, F.7
Norishima, M.8
Murota, M.9
Kako, M.10
Kinugawa, M.11
Kakumu, M.12
Sakurai, T.13
-
32
-
-
84893769310
-
Efficiency analysis of a high frequency buck converter for on-chip integration with a dual-VDD microprocessor
-
(Sept.)
-
Kursun, V., Narendra, S. G., De, V. K., and Friedman, E. G. 2002. Efficiency analysis of a high frequency buck converter for on-chip integration with a dual-VDD microprocessor. In Proceedings of the European Solid-State Circuits Conference (Sept.), 743-746.
-
(2002)
Proceedings of the European Solid-State Circuits Conference
, pp. 743-746
-
-
Kursun, V.1
Narendra, S.G.2
De, V.K.3
Friedman, E.G.4
-
33
-
-
84942088668
-
Monolithic DC-DC converter analysis and MOSFET gate voltage optimization
-
(March)
-
Kursun, V., Narendra, S. G., De, V. K., and Friedman, E. G. 2003. Monolithic DC-DC converter analysis and MOSFET gate voltage optimization. In Proceedings of the IEEE/ACM International Symposium on Quality Electronic Design (March), 279-284.
-
(2003)
Proceedings of the IEEE/ACM International Symposium on Quality Electronic Design
, pp. 279-284
-
-
Kursun, V.1
Narendra, S.G.2
De, V.K.3
Friedman, E.G.4
-
34
-
-
67649133398
-
Cascode buffer for monolithic voltage conversion operating at high input supply voltages
-
(May).
-
Kursun, V., Schrom, G., De, V. K., Friedman, E. G., and Narendra S. G. 2005. Cascode buffer for monolithic voltage conversion operating at high input supply voltages. In Proceedings of the IEEE International Symposium on Circuits and Systems (May).
-
(2005)
Proceedings of the IEEE International Symposium on Circuits and Systems
-
-
Kursun, V.1
Schrom, G.2
De, V.K.3
Friedman, E.G.4
Narendra, S.G.5
-
36
-
-
85024265089
-
Ultra thin ZrO(2) and Zr(27)Si(10)0(63) gate dielectrics directly prepared on si-substrate by rapid thermal processing.
-
(Sept.)
-
Lee, C. H., Lee, S. J., Jeon, T. S., Bai, W. P., Sensaki, Y., Roberts, D., and Kwong, D. L. 2000. Ultra thin ZrO(2) and Zr(27)Si(10)0(63) gate dielectrics directly prepared on si-substrate by rapid thermal processing. SRC Techcon (Sept.). 46.
-
(2000)
SRC Techcon
, pp. 46
-
-
Lee, C.H.1
Lee, S.J.2
Jeon, T.S.3
Bai, W.P.4
Sensaki, Y.5
Roberts, D.6
Kwong, D.L.7
-
37
-
-
0033312227
-
Super selfaligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy
-
Lee, J., Tarachi, G., Wei, A., Langdo, T. A., Fitzgerald, E. A., and Antoniadis, D. 1999. Super selfaligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy. In Proceedings of the International Electron Devices Meeting. 71-74.
-
(1999)
Proceedings of the International Electron Devices Meeting
, pp. 71-74
-
-
Lee, J.1
Tarachi, G.2
Wei, A.3
Langdo, T.A.4
Fitzgerald, E.A.5
Antoniadis, D.6
-
38
-
-
0031069084
-
A 1V DSP for wireless communications
-
(Feb.). IEEE Computer Society Press, Los Alamitos, Calif.
-
Lee, W., Landman, P. E., Barton, B., Abiko, S., Takahashi, H., Mizuno, H., Muramatsu, S., Tashiro, K., Fusumada, M., Pham, L., Boutaud, F., Ego, E., Gallo, G., Tran, H., Lemonds, C., Shih, A., Nandakumar, M., Eklund, R. H., and Chen I.-C. 1997. A 1V DSP for wireless communications. In Proceedings of the IEEE International Solid-State Circuits Conference (Feb.). IEEE Computer Society Press, Los Alamitos, Calif. 92-93.
-
(1997)
Proceedings of the IEEE International Solid-State Circuits Conference
, pp. 92-93
-
-
Lee, W.1
Landman, P.E.2
Barton, B.3
Abiko, S.4
Takahashi, H.5
Mizuno, H.6
Muramatsu, S.7
Tashiro, K.8
Fusumada, M.9
Pham, L.10
Boutaud, F.11
Ego, E.12
Gallo, G.13
Tran, H.14
Lemonds, C.15
Shih, A.16
Nandakumar, M.17
Eklund, R.H.18
Chen, I.-C.19
-
39
-
-
0034430275
-
A 1000- MIPS/W microprocessor using speed adaptive threshold-voltage CMOS with forward bias
-
Miyazaki, M., Ono, G., Hattori, T., Shiozawa, K., Uchiyama, K., and Ishibashi, K. 2000. A 1000- MIPS/W microprocessor using speed adaptive threshold-voltage CMOS with forward bias. In Proceedings of the International Solid-State Circuits Conference. 420-421.
-
(2000)
Proceedings of the International Solid-State Circuits Conference
, pp. 420-421
-
-
Miyazaki, M.1
Ono, G.2
Hattori, T.3
Shiozawa, K.4
Uchiyama, K.5
Ishibashi, K.6
-
41
-
-
0036564323
-
The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance
-
(May)
-
Mohapatra, N. R., Desai, M. P., Narendra, S., and Rao, V. R. 2002. The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance. IEEE Trans. Elect. Dev. 49 (May), 826-831.
-
(2002)
IEEE Trans. Elect. Dev.
, vol.49
, pp. 826-831
-
-
Mohapatra, N.R.1
Desai, M.P.2
Narendra, S.3
Rao, V.R.4
-
43
-
-
0000793139
-
Cramming more components onto integrated circuits.
-
April
-
Moore, G. E. 1965. Cramming more components onto integrated circuits. Electronics 38, 8, April 19.
-
(1965)
Electronics
, vol.38
, Issue.8
, pp. 19
-
-
Moore, G.E.1
-
44
-
-
0033600230
-
The electronic structure at the atomic scale of ultrathin gate oxides.
-
(June)
-
Muller, D. A., Sorsch, T., Moccio, S., Baumann, F. H., Evans-Lutterodt, K., and Timp, G. 1999. The electronic structure at the atomic scale of ultrathin gate oxides. Nature 399 (June), 758-761.
-
(1999)
Nature
, vol.399
, pp. 758-761
-
-
Muller, D.A.1
Sorsch, T.2
Moccio, S.3
Baumann, F.H.4
Evans-Lutterodt, K.5
Timp, G.6
-
45
-
-
0029359285
-
1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
-
(Aug.)
-
Mutoh, S., Douseki, T., Matsuya, Y., Aoki, T., Shigematsu, S., and Yamada, J. 1995, 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS. IEEE J. Solid-State Circ. 30 (Aug.), 847-854.
-
(1995)
IEEE J. Solid-State Circ.
, vol.30
, pp. 847-854
-
-
Mutoh, S.1
Douseki, T.2
Matsuya, Y.3
Aoki, T.4
Shigematsu, S.5
Yamada, J.6
-
47
-
-
0034867611
-
Scaling of stack effect and its application for leakage reduction
-
(Aug.)
-
Narendra, S., Borkar, S., De, V., Antoniadis, D., and Chandrakasan, A. 2001. Scaling of stack effect and its application for leakage reduction. In Proceedings of the International Symposium Low Power Electronics and Design (Aug.). 195-200.
-
(2001)
Proceedings of the International Symposium Low Power Electronics and Design
, pp. 195-200
-
-
Narendra, S.1
Borkar, S.2
De, V.3
Antoniadis, D.4
Chandrakasan, A.5
-
48
-
-
0037852928
-
Forward body bias for microprocessors in 130nm technology generation and beyond
-
(May)
-
Narendra, S., Keshavarzi, A., Bloechel, B., Borkar, S., and De, V. 2003. Forward body bias for microprocessors in 130nm technology generation and beyond. IEEE J. Solid-State Circ. 38 (May), 696-701.
-
(2003)
IEEE J. Solid-State Circ.
, vol.38
, pp. 696-701
-
-
Narendra, S.1
Keshavarzi, A.2
Bloechel, B.3
Borkar, S.4
De, V.5
-
49
-
-
1542605495
-
Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-um CMOS
-
(Sept.)
-
Narendra, S., De, V., Borkar, S., Antoniadis, D., and Chandrakasan, A. 2004. Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-um CMOS. IEEE J. Solid-State Circ. 39 (Sept.), 501-510.
-
(2004)
IEEE J. Solid-State Circ.
, vol.39
, pp. 501-510
-
-
Narendra, S.1
De, V.2
Borkar, S.3
Antoniadis, D.4
Chandrakasan, A.5
-
50
-
-
0015725079
-
DC model for short-channel IGFET's
-
(Dec.)
-
Poon, H. C., Yau, L. D., Johnston, R. L., and Beecham, D. 1973. DC model for short-channel IGFET's. In Proceedings of the International Electron Devices Meeting. (Dec.). 156-159.
-
(1973)
Proceedings of the International Electron Devices Meeting.
, pp. 156-159
-
-
Poon, H.C.1
Yau, L.D.2
Johnston, R.L.3
Beecham, D.4
-
51
-
-
0028465148
-
Sub-threshold-current reduction circuits for multi-gigabit DRAM's
-
(July)
-
Sakata, T., Itoh, K., Horiguchi, H., and Aoki, M. 1994. Sub-threshold-current reduction circuits for multi-gigabit DRAM's. IEEE J. Solid-State Circ. 29 (July), 761-769.
-
(1994)
IEEE J. Solid-State Circ.
, vol.29
, pp. 761-769
-
-
Sakata, T.1
Itoh, K.2
Horiguchi, H.3
Aoki, M.4
-
52
-
-
0033600266
-
The end of the road for silicon.
-
(June)
-
Schulz, M. 1999. The end of the road for silicon. Nature 399 (June), 729-730.
-
(1999)
Nature
, vol.399
, pp. 729-730
-
-
Schulz, M.1
-
55
-
-
0031996753
-
Noise suppression scheme for gigabit-scale and gigabyte/s data-rate LSI's
-
(Feb.)
-
Takashima, D., Oowaki, Y., Watanabe, S., and Ohuchi, K. 1998. Noise suppression scheme for gigabit-scale and gigabyte/s data-rate LSI's. IEEE J. Solid-State Circ. 33 (Feb.), 260-267.
-
(1998)
IEEE J. Solid-State Circ.
, vol.33
, pp. 260-267
-
-
Takashima, D.1
Oowaki, Y.2
Watanabe, S.3
Ohuchi, K.4
-
57
-
-
0002705635
-
MOS scaling: Transistor challenges for the 21st century
-
Thompson, S., Packan, P., and Bohr, M. 1998. MOS scaling: Transistor challenges for the 21st century. Intel Tech. J. Q3.
-
(1998)
Intel Tech. J.
, vol.Q3
-
-
Thompson, S.1
Packan, P.2
Bohr, M.3
-
58
-
-
0036105965
-
Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage
-
(Nov.)
-
Tschanz, J., Kao, J., Narendra, S., Nair, R., Antoniadis, D., Chandrakasan, A., and De, V. 2002. Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage. IEEE J. Solid-State Circ. 37 (Nov.), 1396-1402.
-
(2002)
IEEE J. Solid-State Circ.
, vol.37
, pp. 1396-1402
-
-
Tschanz, J.1
Kao, J.2
Narendra, S.3
Nair, R.4
Antoniadis, D.5
Chandrakasan, A.6
De, V.7
-
59
-
-
0038528639
-
Effectiveness of adaptive supply voltage and body bias for reducing impact of parameter variations in low power and high performance microprocessors
-
(May)
-
Tschanz, J., Narendra, S., Nair, R., and De, V. 2003. Effectiveness of adaptive supply voltage and body bias for reducing impact of parameter variations in low power and high performance microprocessors. IEEE J. Solid-State Circ. 38 (May), 826-829.
-
(2003)
IEEE J. Solid-State Circ.
, vol.38
, pp. 826-829
-
-
Tschanz, J.1
Narendra, S.2
Nair, R.3
De, V.4
-
60
-
-
0037969281
-
Dynamic sleep transistor and body bias for active leakage power control of microprocessors
-
(Nov.)
-
Tschanz, J., Narendra, S., Ye, Y., Bloechel, B., Borkar, S., and De, V. 2003. Dynamic sleep transistor and body bias for active leakage power control of microprocessors. IEEE J. Solid-State Circ. 38 (Nov.), 1838-1845.
-
(2003)
IEEE J. Solid-State Circ.
, vol.38
, pp. 1838-1845
-
-
Tschanz, J.1
Narendra, S.2
Ye, Y.3
Bloechel, B.4
Borkar, S.5
De, V.6
-
62
-
-
0036858388
-
5GHz 32b integer-execution core in 130nm dual-VT CMOS.
-
(Nov.)
-
Vangal, S., Anders, M. A., Borkar, N., Seligman, E., Govindarajulu, V., Erraguntla, V., Wilson, H., Pangal, A., Veeramachaneni, V., Tschanz, J. W., Ye, Y., Somasekhar, D., Bloechel, B. A., Dermer, G. E., Krishnamurthy, R. K., Soumyanath, K., Mathew, S., Narendra, S. G., Stan, M. R. Thompson, S., De, V., and Borkar, S. 2002. 5GHz 32b integer-execution core in 130nm dual-VT CMOS. IEEE J. Solid-State Circ. 37 (Nov.), 1421-1432.
-
(2002)
IEEE J. Solid-State Circ.
, vol.37
, pp. 1421-1432
-
-
Vangal, S.1
Anders, M.A.2
Borkar, N.3
Seligman, E.4
Govindarajulu, V.5
Erraguntla, V.6
Wilson, H.7
Pangal, A.8
Veeramachaneni, V.9
Tschanz, J.W.10
Ye, Y.11
Somasekhar, D.12
Bloechel, B.A.13
Dermer, G.E.14
Krishnamurthy, R.K.15
Soumyanath, K.16
Mathew, S.17
Narendra, S.G.18
Stan, M.R.19
Thompson, S.20
De, V.21
Borkar, S.22
more..
-
63
-
-
0033711823
-
CMOS with active well bias for low-power and RF/analog applications
-
Wann, C., Harrington, J., Mih, R., Biesemans, S., Han, K., Dennard, R., Prigge, O., Lin, C., Mahnkopf, R., and Chen, B. 2000. CMOS with active well bias for low-power and RF/analog applications. In Proceedings of the Symposium on VLSI Technology. 158-159.
-
(2000)
Proceedings of the Symposium on VLSI Technology
, pp. 158-159
-
-
Wann, C.1
Harrington, J.2
Mih, R.3
Biesemans, S.4
Han, K.5
Dennard, R.6
Prigge, O.7
Lin, C.8
Mahnkopf, R.9
Chen, B.10
-
64
-
-
0033100297
-
Design and optimization of dual-threshold circuits for low-voltage low-power applications
-
(Mar.)
-
Wei, L., Chen, Z., Roy, K., Johnson, M., Ye, Y., and De, V. 1999. Design and optimization of dual-threshold circuits for low-voltage low-power applications. IEEE Trans. VLSI Syst. 7 (Mar.), 16-24.
-
(1999)
IEEE Trans. VLSI Syst.
, vol.7
, pp. 16-24
-
-
Wei, L.1
Chen, Z.2
Roy, K.3
Johnson, M.4
Ye, Y.5
De, V.6
-
65
-
-
0034430274
-
A 450 Mhz 64b RISC processor using multiple threshold voltage CMOS
-
(Feb.). IEEE Computer Society Press, Los Alamitos, Calif.
-
Yamashita, T., Yoshida, N., Sakamoto, M., Matsumoto, T., Kusunoki, M., Takahashi, H., Wakahara, A., Ito, T., Shimizu, T., Kurita, K., Higeta, K., Mori, K., Tamba, N., Kato, N., Miyamoto, K., Yamagata, R., Tanaka, H., and Hiyama, T. 2000. A 450 Mhz 64b RISC processor using multiple threshold voltage CMOS. In Proceedings of the IEEE International Solid-State Circuits Conference (Feb.). IEEE Computer Society Press, Los Alamitos, Calif. 414-415.
-
(2000)
Proceedings of the IEEE International Solid-State Circuits Conference
, pp. 414-415
-
-
Yamashita, T.1
Yoshida, N.2
Sakamoto, M.3
Matsumoto, T.4
Kusunoki, M.5
Takahashi, H.6
Wakahara, A.7
Ito, T.8
Shimizu, T.9
Kurita, K.10
Higeta, K.11
Mori, K.12
Tamba, N.13
Kato, N.14
Miyamoto, K.15
Yamagata, R.16
Tanaka, H.17
Hiyama, T.18
|