-
2
-
-
0026853681
-
Low-power CMOS digital design
-
Apr.
-
A. Chandrakasan, S. Sheng, and R. W. Brodersen, "Low-power CMOS digital design," IEEE J. Solid-State Circuits, vol. 27, pp. 473-484, Apr. 1992.
-
(1992)
IEEE J. Solid-State Circuits
, vol.27
, pp. 473-484
-
-
Chandrakasan, A.1
Sheng, S.2
Brodersen, R.W.3
-
4
-
-
0028745324
-
CMOS technology scaling for low voltage low power applications
-
Z. Chen, J. Shott, J. Burr, and J. D. Plummer, "CMOS technology scaling for low voltage low power applications," in Proc. IEEE Symp. Low Power Electronics, 1994, pp. 56-57.
-
Proc. IEEE Symp. Low Power Electronics, 1994
, pp. 56-57
-
-
Chen, Z.1
Shott, J.2
Burr, J.3
Plummer, J.D.4
-
5
-
-
0015725079
-
DC model for short-channel IGFETs
-
H. C. Poon, L. D. Yau, R. L. Johnston, and D. Beecham, "DC model for short-channel IGFETs," in Int. Electron Devices Meeting Tech. Dig., Dec. 1973, pp. 156-159.
-
Int. Electron Devices Meeting Tech. Dig., Dec. 1973
, pp. 156-159
-
-
Poon, H.C.1
Yau, L.D.2
Johnston, R.L.3
Beecham, D.4
-
8
-
-
0033600230
-
The electronic structure at the atomic scale of ultrathin gate oxides
-
June
-
D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, "The electronic structure at the atomic scale of ultrathin gate oxides," Nature, vol. 399, pp. 758-761, June 1999.
-
(1999)
Nature
, vol.399
, pp. 758-761
-
-
Muller, D.A.1
Sorsch, T.2
Moccio, S.3
Baumann, F.H.4
Evans-Lutterodt, K.5
Timp, G.6
-
9
-
-
0033600266
-
The end of the road for silicon
-
June
-
M. Schulz, "The end of the road for silicon," Nature, vol. 399, pp. 729-730, June 1999.
-
(1999)
Nature
, vol.399
, pp. 729-730
-
-
Schulz, M.1
-
10
-
-
25344447271
-
80 nm poly-Si gate CMOS with HfO2 gate dielectric
-
K. Reid, B. Taylor, L. Dip, L. Hebert, R. Garcia, R. Hedge, J. Grant, D. Gilmer, A. Franke, V. Dhandapani, M. Azrak, L. Prabhu, R. Rai, S. Bagchi, J. Conner, S. Backer, F. Dumbuya, B. Nguyen, and P. Tobin, "80 nm poly-Si gate CMOS with HfO2 gate dielectric," in Int. Electron Devices Meeting Tech. Dig., Dec. 2001, pp. 30.1.1-30.1.4.
-
Int. Electron Devices Meeting Tech. Dig., Dec. 2001
-
-
Reid, K.1
Taylor, B.2
Dip, L.3
Hebert, L.4
Garcia, R.5
Hedge, R.6
Grant, J.7
Gilmer, D.8
Franke, A.9
Dhandapani, V.10
Azrak, M.11
Prabhu, L.12
Rai, R.13
Bagchi, S.14
Conner, J.15
Backer, S.16
Dumbuya, F.17
Nguyen, B.18
Tobin, P.19
-
11
-
-
0033312227
-
Super self-aligned double-gate (SSDG) MOSFET's utilizing oxidation rate difference and selective epitaxy
-
J. Lee, G. Tarachi, A. Wei, T. A. Langdo, E. A. Fitzgerald, and D. Antoniadis, "Super self-aligned double-gate (SSDG) MOSFET's utilizing oxidation rate difference and selective epitaxy," in Int. Electron Devices Meeting Tech. Dig., 1999, pp. 71-74.
-
Int. Electron Devices Meeting Tech. Dig., 1999
, pp. 71-74
-
-
Lee, J.1
Tarachi, G.2
Wei, A.3
Langdo, T.A.4
Fitzgerald, E.A.5
Antoniadis, D.6
-
12
-
-
0034429682
-
Threshold canceling logic (TCL): A post-CMOS logic family scalable down to 0.02 μm
-
I. Kohno, T. Sano, N. Katoh, and K. Yano, "Threshold canceling logic (TCL): A post-CMOS logic family scalable down to 0.02 μm," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2000, pp. 218-219.
-
IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2000
, pp. 218-219
-
-
Kohno, I.1
Sano, T.2
Katoh, N.3
Yano, K.4
-
13
-
-
0034867611
-
Scaling of stack effect and its application for leakage reduction
-
S. Narendra, S. Borkar, V. De, D. Antoniadis, and A. Chandrakasan, "Scaling of stack effect and its application for leakage reduction," in Proc. Int. Symp. Low Power Electronics and Design, Aug. 2001, pp. 195-200.
-
Proc. Int. Symp. Low Power Electronics and Design, Aug. 2001
, pp. 195-200
-
-
Narendra, S.1
Borkar, S.2
De, V.3
Antoniadis, D.4
Chandrakasan, A.5
-
14
-
-
0034878684
-
Effectiveness of reverse body bias for leakage control, in scaled dual Vt CMOS ICs
-
A. Keshavarzi, S. Ma, S. Narendra, B. Bloechel, K. Mistry, T. Ghani, S. Borkar, and V. De, "Effectiveness of reverse body bias for leakage control, in scaled dual Vt CMOS ICs," in Proc. Int. Symp. Low Power Electronics and Design, Aug. 2001, pp. 207-212.
-
Proc. Int. Symp. Low Power Electronics and Design, Aug. 2001
, pp. 207-212
-
-
Keshavarzi, A.1
Ma, S.2
Narendra, S.3
Bloechel, B.4
Mistry, K.5
Ghani, T.6
Borkar, S.7
De, V.8
-
16
-
-
0031635212
-
A new technique for standby leakage reduction in high-performance circuits
-
Y. Ye, S. Borkar, and V. De, "A new technique for standby leakage reduction in high-performance circuits," in Symp. VLSI Circuits Dig. Tech. Papers, 1998, pp. 40-41.
-
Symp. VLSI Circuits Dig. Tech. Papers, 1998
, pp. 40-41
-
-
Ye, Y.1
Borkar, S.2
De, V.3
-
17
-
-
0031623626
-
Estimation of standby leakage power in CMOS circuits considering accurate modeling of transistor stacks
-
Z. Chen, M. Johnson, L. Wei, and K. Roy, "Estimation of standby leakage power in CMOS circuits considering accurate modeling of transistor stacks," in Proc. Int. Symp. Low Power Electronics and Design, 1998, pp. 239-244.
-
Proc. Int. Symp. Low Power Electronics and Design, 1998
, pp. 239-244
-
-
Chen, Z.1
Johnson, M.2
Wei, L.3
Roy, K.4
-
18
-
-
0031632790
-
A high-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects
-
L. Su et al., "A high-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects," in Symp. VLSI Technology Dig. Tech. Papers, 1998, pp. 18-19.
-
Symp. VLSI Technology Dig. Tech. Papers, 1998
, pp. 18-19
-
-
Su, L.1
-
19
-
-
0031621935
-
Emerging power management tools for processor design
-
D. T. Blaauw, A. Dharchoundhury, R. Panda, S. Sirichotiyakul, C. Oh, and T. Edwards, "Emerging power management tools for processor design," in Proc. Int. Symp. Low Power Electronics and Design, 1998, pp. 143-148.
-
Proc. Int. Symp. Low Power Electronics and Design, 1998
, pp. 143-148
-
-
Blaauw, D.T.1
Dharchoundhury, A.2
Panda, R.3
Sirichotiyakul, S.4
Oh, C.5
Edwards, T.6
-
20
-
-
85036612496
-
-
New York, NY: IEEE Press
-
A. Chandrakasan, W. J. Bowhill, and F. Foz, Design of High Performance Microprocessor Circuits. New York, NY: IEEE Press, 2000, pp. 46-47.
-
(2000)
Design of High Performance Microprocessor Circuits
, pp. 46-47
-
-
Chandrakasan, A.1
Bowhill, W.J.2
Foz, F.3
-
21
-
-
0032599276
-
CMOS scaling beyond 0.1 μm: How far can it go?
-
Y. Taur, "CMOS scaling beyond 0.1 μm: How far can it go?," in Int. Symp. VLSI Technology, Systems, and Applications Dig. Tech. Papers, 1999, pp. 6-9.
-
Int. Symp. VLSI Technology, Systems, and Applications Dig. Tech. Papers, 1999
, pp. 6-9
-
-
Taur, Y.1
|