Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 71-74

  Lee, Jong Ho ^a   Taraschi, Gianni ^a   Wei, Andy ^a   Langdo, Tom A ^a   Fitzgerald, Eugene A ^a   Antoniadis, Dimitri A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; GATES (TRANSISTOR); OXIDATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

OXIDATION RATE DIFFERENCE; SELECTIVE EPITAXY; SELF ALIGNED DOUBLE GATE MOSFET;

MOSFET DEVICES;

EID: 0033312227     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)