No exponential is forever: But "forever" can be delayed!

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2003, Pages 19-25

  Moore, Gordon E ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ECONOMIC AND SOCIAL EFFECTS; ELECTRIC FIELDS; ELECTRONICS INDUSTRY; PERMITTIVITY; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; TECHNICAL PRESENTATIONS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

GATE DIELECTRIC; PACKING DENSITY; PRODUCTION CAPACITY; SEMICONDUCTOR INDUSTRY; SOLID STATE CIRCUITS; TRANSMISSION ELECTRON MICROGRAPH;

SOLID STATE DEVICES;

EID: 0038645647     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. G. E. Moore, "Cramming more Components onto Integrated Circuits," Electronics, vol. 38, no. 8, April 19, 1965.
2. G. E. Moore, "Progress in Digital Integrated Electronics," Technical Digest of International Electron Devices Meeting, p. 11, Dec. 1975.
3. R. Chau, et al, "A 50nm Depleted-Substrate CMOS Transistor (DST)," Technical Digest of International Electron Devices Meeting, pp. 621-624, Dec. 2001.
4. X. Huang, et al. "Sub 50-nm FinFET: PMOS," Technical Digest of International Electron Devices Meeting, pp. 67-70, Dec. 1999.
5. R. Chau et al, "Advanced Depleted Substrate Transistors: Single-gate. Double-gate and Tri-gate," Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, pp. 68-69, Sept. 2002. Nagoya, Japan.
6. 2 6-T STAM Cell," to be published in the Technical Digest of International Electron Devices Meeting, Dec., 2002.