Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel

Solid-State Electronics

Volumn 54, Issue 2, 2010, Pages 213-219

  Burignat, S ^a   Flandre, D ^a   Md Arshad, M K ^a   Kilchytska, V ^a   Andrieu, F ^b   Faynot, O ^b   Raskin, J P ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b CEA LETI   (France)

Author keywords

Short channel effect; SOI MOSFET; Substrate coupling; Subthreshold slope; Thin BOX; UTB

Indexed keywords

ANALYTICAL MODELING; ATLAS SIMULATIONS; BURIED OXIDES; CHANNEL POSITION; COMPREHENSIVE STUDIES; ELECTRICAL PARAMETER; GATE LENGTH; SHORT-CHANNEL EFFECT; SOI-MOSFETS; SPACE CHARGES; SUBSTRATE BIAS; SUBSTRATE COUPLINGS; SUBTHRESHOLD SLOPE; ULTRA-THIN; ULTRATHIN BODY; UNDOPED CHANNELS;

MOSFET DEVICES; THRESHOLD VOLTAGE;

SUBSTRATES;

EID: 76349087827     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.12.021     Document Type: Article

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