Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

Solid-State Electronics

Volumn 51, Issue 2, 2007, Pages 239-244

  Eminente, S ^a   Cristoloveanu, S ^a   Clerc, R ^a   Ohata, A ^a   Ghibaudo, G ^a  

^a IMEP LAHC   (France)

Author keywords

Characterization; Coupling; SOI; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

ACCUMULATION REGIME; BACK INTERFACE; CHARACTERIZATION METHOD; COUPLING EFFECTS;

MOSFET DEVICES;

EID: 33847333096     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.016     Document Type: Article

References (8)

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