Nanoscale FD/SOI CMOS: Thick or thin BOX?

IEEE Electron Device Letters

Volumn 26, Issue 1, 2005, Pages 26-28

  Trivedi, V P ^a   Fossum, J G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

Buried oxide (BOX) thickness; Fully depleted (FD) silicon on insulator (SOI) CMOS; Ultrathin body (UTB) MOSFET

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; MOSFET DEVICES; NANOTECHNOLOGY; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; THICK FILM DEVICES; THIN FILM DEVICES; ULTRATHIN FILMS;

BURIED OXIDE (BOX) THICKNESS; ELECTRIC FIELD FRINGING; FULLY DEPLETED SILICON-ON-INSULATOR CMOS; ULTRATHIN BODIES;

CMOS INTEGRATED CIRCUITS;

EID: 12444292832     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.839624     Document Type: Article

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