V th control of t pd-degradation-free FD SOI MOSFET with extremely thin BOX using variable body-factor scheme

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 101-103

  Ohtou, Tetsu ^a   Yokoyama, Kouki ^a,b   Nagumo, Toshiharu ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b CHUO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744766119     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563551     Document Type: Conference Paper

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