Comparative scalability of PVD and CVD TiN on HfO2 as a metal gate stack for FDSOI cMOSFETs down to 25nm gate length and width

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Andrieu, F ^a   Faynot, O ^a   Garros, X ^a   Lafond, D ^a   Buj Dufournet, C ^a   Tosti, L ^a   Minoret, S ^a   Vidal, V ^b   Barbe J C ^a   Allain, F ^a   Rouchouze, E ^b   Vandroux, L ^a   Cosnier, V ^b   Casse M ^a   Delaye, V ^a   Carabasse, C ^a   Burdin, M ^a   Rolland, G ^a   Guillaumot, B ^b   Colonna, J P ^a   Besson, P ^b   Brevard L ^a   Mariolle, D ^a   Holliger, P ^a   Vandooren, A ^c   Fenouillet Beranger C ^a   Martin, F ^a   Deleonibus, S ^a   more..

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; HAFNIUM COMPOUNDS; SCALABILITY; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CHEMICAL-; CVD TIN;

CHEMICAL VAPOR DEPOSITION;

EID: 46049113111     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346865     Document Type: Conference Paper

References (7)

1. B. Guillaumot et al., IEDM Tech. Dig., p. 355, 2002
2. S. B. Samavedam et al., VLSI Tech., p. 24, 2002
3. W. Tsai et al., IEDM Tech. Dig., p. 311, 2003
4. S. H. Bae et al., VLSI Tech., p. 188, 2004
5. A. Yagishita et al., IEEE TED 48, 8, p. 1604, 2001
6. D.-G. Park et al., APL 80, 14, p. 2514, 2002
7. O. Weber et al., IEDM Tech. Dig., p. 867, 2004