Undoped thin film FD-SOI CMOS with source/drain-to-gate non-overlapped structure for ultra low leak applications

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 176-177

  Miura, Noriyuki ^a   Domae, Yasuhiro ^a   Sakata, Toyokazu ^a   Watanabe, Minoru ^a   Okamura, Tomohiro ^a   Chiba, Tadashi ^a   Fukuda, Koichi ^a   Ida, Jiro ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COSTS; NATURAL FREQUENCIES; THIN FILMS; TRANSISTORS;

COIN-BATTERY APPLICATIONS; INVERTED-GATE-IMPLANTATION; NON-OVERLAPPED STRUCTURE; ULTRA LOW LEAK (ULL) TRANSISTOR;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33744731693     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563579     Document Type: Conference Paper

References (4)

1. ITRS 2003 Edition, Emerging Research Devices
2. F. Boeuf et. al., pp.637-640, IEDM Dig. 2001,
3. H. Lee et. al., pp.219-225, IEEE Trans. Nanotech., Vol. 1, No.4, 2002
4. T. Ichimori et. al., IEEE SOI Conf. pp.72-73, 2000