Characteristics of very high-aspect-ratio contact hole etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 SUPPL. B, 1997, Pages 2470-2476

  Ikegami, Naokatsu ^a   Yabata, Atsushi ^a   Matsui, Takayuki ^a   Kanamori, Jun ^a   Horiike, Yasuhiro ^b  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

Bowing; CHF3 CO gas; Contact hole etching; Fluorocarbon plasma; High aspect ratio; Magnetically enhanced reactive ion etching; RIE lag

Indexed keywords

POLYSILICON MASKS;

ASPECT RATIO; BENDING (FORMING); FLUORINE CONTAINING POLYMERS; FLUOROCARBONS; ION BOMBARDMENT; MASKS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SPUTTER DEPOSITION;

SILICA;

EID: 0031118260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2470     Document Type: Article

References (16)

1. J. Marks, K. Collins, C. L. Yang, D. Groechel, P. Keswick and C. Cunningham: Proc. Advanced Techniques for Integrated Circuit Processing II (The Society of Photo-Optical Instrumentation Engineers, Washington, 1992) Vol. 1803.
2. H. Hayashi, K. Kurihara and M. Sekine: Jpn. J. Appl. Phys. 35 (1996) 2488.
3. T. Fukasawa, K. Kubota, H. Shindo and Y. Horiike: Jpn. J. Appl. Phys. 33 (1994) 7042.
4. K. Kurihara, M. Sekine and H. Okano: Proc. Dry Process Symp, Tokyo, 1994 (The Institute of Electrical Engineers of Japan, Tokyo, 1994) p. 217.
5. J. Janes and W. Pilz: J. Appl. Phys. 74 (1993) 649.
6. K. P. Giapis, G. R. Scheller, R. A. Gottscho, W. S. Hobson and Y.H. Lee: Appl. Phys. Lett. 57 (1990) 983.
7. O. Joubert, G. S. Oehrlein and M. Surenda: J. Vac. Sci. Technol. A12 (1994) 665.
8. J. W. Coburn and H. F. Winters: Appl. Phys. Lett. 55 (1989) 2730.
9. C. M. Howiz: Appl. Phys. Lett. 62 (1993) 25.
10. J. P. MacVittie, S. Murakawa and S. Fang: Dig. Pap. Miero Process Conf. 93', Hiroshima, 1993 (Business Center for Academic Society Japan, Tokyo, 1993) p. 112.
11. R.J. Davis: Appl. Phys. Lett. 59 (1991) 717.
12. N. Ikegami, N. Ozawa, Y. Miyakawa and J. Kanamori: Jpn. J. Appl. Phys. 30 (1991) 1556.
13. Y. Miyakawa, J. Hashimoto, N. Ikegami, T. Matsui and J. Kanamori: Jpn. J. Appl. Phys. 33 (1994) 2145.
14. Y. Miyakawa, K. Fujita, N. Hirashita, N. Ikegami, J. Hashimoto, T. Matsui and J. Kanamori: Jpn. J. Appl. Phys. 33 (1994) 7047.
15. N. Ikegami, N. Ozawa, Y. Miyakawa N. Hirashita and J. Kanamori: Jpn. J. Appl. Phys. 31 (1992) 2020.
16. N. Ikegami, Y. Miyakawa, J. Hashimoto, N. Ozawa and J. Kanamori: Jpn. J. Appl. Phys. 32 (1993) 6088.