The role of mask charging in profile evolution and gate oxide degradation

Microelectronic Engineering

Volumn 61, Issue 62, 2002, Pages 835-847

  Giapis, K P ^a   Hwang, G S ^a   Joubert, O ^b  

^a California Institute of Technology   (United States)

^b Laboratoire Interdisciplinaire de Physique   (United States)

Author keywords

Gate oxide damage; Mask charging; Plasma etching; Profile evolution

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; DEGRADATION; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; GATES (TRANSISTOR); IONS; MICROSTRUCTURE; OXIDES; PLASMA ETCHING;

MASK CHARGING;

MASKS;

EID: 0036643807     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00459-8     Document Type: Article

References (11)

1. Fundamentals of plasma process-induced charging and damage