A review on the physical mechanisms that limit the reliability of GaN-based LEDs

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 108-118

  Meneghini, Matteo ^a   Tazzoli, August ^a   Mura, Giovanna ^b   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b Telemicroscopy Laboratory   (Italy)

Author keywords

Degradation; Failure analysis; Gallium nitride (GaN); Light emitting diode (LED); Reliability

Indexed keywords

ACTIVE LAYER; CATASTROPHIC FAILURES; DEGRADATION FAILURE; DEGRADATION MECHANISM; DIRECT CURRENT STRESS; FAILURE MODES AND MECHANISMS; GAN BASED LED; LED STRUCTURE; LITERATURE DATA; NON-RADIATIVE RECOMBINATIONS; PHYSICAL MECHANISM; RELIABILITY EVALUATION; RELIABILITY TEST; REVERSE-BIAS; WHITE LED;

DEGRADATION; DIODES; ELECTROSTATIC DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; OHMIC CONTACTS; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); QUALITY ASSURANCE; RELIABILITY ANALYSIS; SAFETY FACTOR;

FAILURE ANALYSIS;

EID: 73349105248     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2033649     Document Type: Article

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