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Applied Physics Letters

Volumn 94, Issue 13, 2009, Pages

The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties

(7) Jeon, Soo Kun a Lee, Jae Gab a Park, Eun Hyun b Jang, Jin b Lim, Jae Gu c Kim, Seo Kun c Park, Joong Seo c

a Kookmin University (South Korea)

b Kyung Hee University (South Korea)

c EpiValley Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; GAN LAYERS; HUMAN BODY MODELS; INTERNAL CAPACITANCES; LIGHT EMITTING DIODE LEDS; SILICON DOPING;

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS;

CAPACITANCE;

EID: 64149102103 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3114974 Document Type: Article

Times cited : (53)

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