Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5203-5207

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Kim, J ^b   Luo, B ^b   Mehandru, R ^b   Ren, F ^b   Lee, K P ^b   Pearton, S J ^b   Osinsky, A V ^c   Norris, P E ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b University of Florida   (United States)

^c Corning Applied Technologies ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING CHARACTERISTICS; FORWARD CURRENTS; GAN/INGAN; HETEROJUNCTION DIODES; IV CHARACTERISTICS; MULTIQUANTUM WELLS; SPACE CHARGE REGIONS;

LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR DIODES;

HETEROJUNCTIONS;

EID: 0037091886     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1465119     Document Type: Article

References (12)

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