A review on the reliability of GaN-based LEDs

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 2, 2008, Pages 323-331

  Meneghini, Matteo ^a   Trevisanello, Lorenzo Roberto ^a   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; DEGRADATION MECHANISMS; GAN-BASED LEDS; GAN-BASED LIGHT-EMITTING DIODES; HIGH-POWER LEDS; HIGH-TEMPERATURE STORAGES; HIGH-TEMPERATURE STRESS; LEVEL DISTRIBUTIONS; LIGHTING APPLICATIONS; LOW-CURRENT DENSITIES; NON-RADIATIVE RECOMBINATIONS; OPTICAL POWER; SEMICONDUCTOR LAYERS;

DEGRADATION; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICES;

LIGHT EMITTING DIODES;

EID: 63049115303     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.921527     Document Type: Review

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