Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

Journal of Physics D: Applied Physics

Volumn 41, Issue 3, 2008, Pages

  Hu, Jianzheng ^a   Yang, Lianqiao ^a   Shin, Moo Whan ^a  

^a Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; PYROLYSIS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL AGING;

INJECTION CURRENT; STRUCTURAL DEGRADATIONS;

LIGHT EMITTING DIODES;

EID: 43049105414     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/3/035107     Document Type: Article

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