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Volumn 26, Issue 9, 2008, Pages 1154-1171

History, development, and applications of high-brightness visible light-emitting diodes

Author keywords

Epitaxial growth; Epitaxial layers; Light sources; Light emitting diodes (LEDS); Semiconductor diodes; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor heterojunctions; Semiconductor lasers

Indexed keywords

BIPOLAR TRANSISTORS; ENERGY EFFICIENCY; LIGHT; LIGHT EMISSION; LIGHT SOURCES; LIGHTING; LUMINANCE; LUMINOUS MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TECHNOLOGICAL FORECASTING; TECHNOLOGY TRANSFER;

EID: 46749095575     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.923628     Document Type: Review
Times cited : (231)

References (147)
  • 1
    • 0000672421 scopus 로고    scopus 로고
    • Is the light emitting diode (LED) an ultimate lamp?
    • Sep
    • N. Holonyak, Jr., "Is the light emitting diode (LED) an ultimate lamp?," Amer. J. Phys., vol. 68, pp. 864-866, Sep. 2000.
    • (2000) Amer. J. Phys , vol.68 , pp. 864-866
    • Holonyak Jr., N.1
  • 3
    • 46749103912 scopus 로고    scopus 로고
    • EU green light for Audi headlamps
    • Oct
    • "EU green light for Audi headlamps," Compound Semiconductor, vol. 13, no. 9, p. 11, Oct. 2007.
    • (2007) Compound Semiconductor , vol.13 , Issue.9 , pp. 11
  • 4
    • 46749106170 scopus 로고    scopus 로고
    • While the defintion of high-brightness, is somewhat arbitrary, in this work, we will use this term to refer to LEDs with a lummous efficacy > 35 lumens/watt
    • While the defintion of "high-brightness," is somewhat arbitrary, in this work, we will use this term to refer to LEDs with a lummous efficacy > 35 lumens/watt.
  • 5
    • 46749147802 scopus 로고
    • Carborundum as a wireless telegraph receiver
    • Aug. 25
    • H. J. Round, "Carborundum as a wireless telegraph receiver," Electrical World, Aug. 25, 1906.
    • (1906) Electrical World
    • Round, H.J.1
  • 6
    • 0000761113 scopus 로고
    • A note on carborundum
    • H. J. Round, "A note on carborundum,," Electrical World, vol. 49, p. 309, 1907.
    • (1907) Electrical World , vol.49 , pp. 309
    • Round, H.J.1
  • 7
    • 77449135631 scopus 로고
    • Behavior of contact detectors; the effect of temperature on the generating contact
    • In Russian, Mar
    • O. V. Lossev, "Behavior of contact detectors; the effect of temperature on the generating contact,," Telegrafia I Telefonia Bez Provodov, vol. 18, pp. 45-62, Mar. 1923, (In Russian.).
    • (1923) Telegrafia I Telefonia Bez Provodov , vol.18 , pp. 45-62
    • Lossev, O.V.1
  • 8
    • 46749115824 scopus 로고
    • Oscillating crystals
    • Oct
    • O. V. Lossev, "Oscillating crystals," Wireless World and Radio Review, vol. 271, no. 22, pp. 93-96, Oct. 1924.
    • (1924) Wireless World and Radio Review , vol.271 , Issue.22 , pp. 93-96
    • Lossev, O.V.1
  • 9
    • 46749154873 scopus 로고    scopus 로고
    • O. V. Lossev, Luminous carborundum detector and detection effect and oscillations with crystals, Phil. Mag., 5, pp. 1024-1044, Nov. 1928, This is an extended description of the work described in [10].
    • O. V. Lossev, "Luminous carborundum detector and detection effect and oscillations with crystals,," Phil. Mag., vol. 5, pp. 1024-1044, Nov. 1928, This is an extended description of the work described in [10].
  • 10
    • 0005984332 scopus 로고
    • Subhistories of the light emitting diode
    • E. E. Locbner, "Subhistories of the light emitting diode," IEEE Trans. Elect. Dev., vol. ED-23, no. 7, pp. 675-699, 1976.
    • (1976) IEEE Trans. Elect. Dev , vol.ED-23 , Issue.7 , pp. 675-699
    • Locbner, E.E.1
  • 12
    • 46749132094 scopus 로고
    • P - N luminescence in gallium phosphide
    • H. G. Grimmeiss and H. Kolemans, "P - N luminescence in gallium phosphide," Philips Tech. Rev., vol. 22, no. 11, pp. 360-361, 1960.
    • (1960) Philips Tech. Rev , vol.22 , Issue.11 , pp. 360-361
    • Grimmeiss, H.G.1    Kolemans, H.2
  • 13
    • 46749138497 scopus 로고
    • Electronic waves and the electron
    • Dec
    • J. J. Thompson, "Electronic waves and the electron," Phil. Mag., vol. 6, pp. 1254-1281, Dec. 1928.
    • (1928) Phil. Mag , vol.6 , pp. 1254-1281
    • Thompson, J.J.1
  • 14
    • 0031165981 scopus 로고    scopus 로고
    • The origins of the pn junction
    • Jun
    • M. Riordan and L. Hoddeson, "The origins of the pn junction,," IEEE Spectrum, vol. 34, no. 6, pp. 46-51, Jun. 1997.
    • (1997) IEEE Spectrum , vol.34 , Issue.6 , pp. 46-51
    • Riordan, M.1    Hoddeson, L.2
  • 16
    • 46749126793 scopus 로고
    • Alternating current rectifier,
    • U.S. Patent 2 402 661, filed March 1, 1941, issued June 25
    • R. S. Ohl, "Alternating current rectifier," U.S. Patent 2 402 661, 1946, filed March 1, 1941, issued June 25.
    • (1946)
    • Ohl, R.S.1
  • 17
    • 46349083301 scopus 로고
    • Light-sensitive electric device,
    • U.S. Patent 2402 662, filed May 27, 1941, issued June 25
    • R. S. Ohl, "Light-sensitive electric device," U.S. Patent 2402 662. 1946, filed May 27, 1941, issued June 25.
    • (1946)
    • Ohl, R.S.1
  • 18
    • 0023365645 scopus 로고
    • Research at Lincoln Laboratory leading up to the development of the injection laser rn 1962
    • Jun
    • R. H. Rediker, "Research at Lincoln Laboratory leading up to the development of the injection laser rn 1962," IEEE J. Quant. Elect. vol. QE-23, no. 6, pp. 692-5, Jun. 1987.
    • (1987) IEEE J. Quant. Elect , vol.QE-23 , Issue.6 , pp. 692-695
    • Rediker, R.H.1
  • 19
    • 36149003702 scopus 로고
    • Constitution of metallic sodium
    • May 15
    • E. Wigner and F. Seitz, "Constitution of metallic sodium," Phys. Rev., vol. 43, pp. 804-810, May 15, 1933.
    • (1933) Phys. Rev , vol.43 , pp. 804-810
    • Wigner, E.1    Seitz, F.2
  • 20
    • 0000628411 scopus 로고
    • Constitution of metallic sodium. II
    • Sep. 15
    • E. Wigner and F. Seitz, "Constitution of metallic sodium. II," Phys. Rev., vol. 46, pp. 509-524, Sep. 15, 1934.
    • (1934) Phys. Rev , vol.46 , pp. 509-524
    • Wigner, E.1    Seitz, F.2
  • 21
    • 36849138382 scopus 로고
    • Modern theory of solids
    • Apr
    • F. Seitz and R. P. Johnson, "Modern theory of solids,," J. Appl. Phys., vol. 8, no. 4, pp. 246-260, Apr. 1937.
    • (1937) J. Appl. Phys , vol.8 , Issue.4 , pp. 246-260
    • Seitz, F.1    Johnson, R.P.2
  • 23
    • 36149025707 scopus 로고
    • Surface states and rectification at metal semi-conductor contact
    • May 15
    • J. Bardeen, "Surface states and rectification at metal semi-conductor contact," Phys. Rev., vol. 71, no. 10, pp. 717-727, May 15, 1947.
    • (1947) Phys. Rev , vol.71 , Issue.10 , pp. 717-727
    • Bardeen, J.1
  • 24
    • 36149010714 scopus 로고
    • The transistor, a semi-conductot triode
    • Jul. 15
    • J. Bardeen and W. Brattain, "The transistor, a semi-conductot triode," Phys. Rev., vol. 74, pp. 230-231, Jul. 15, 1948.
    • (1948) Phys. Rev , vol.74 , pp. 230-231
    • Bardeen, J.1    Brattain, W.2
  • 25
    • 36149024398 scopus 로고
    • Nature of the forward current in Germanium point contacts
    • Jul. 15
    • W. H. Brattain and J. Bardeen, "Nature of the forward current in Germanium point contacts," Phys. Rev., vol. 74, pp. 231-232, Jul. 15, 1948.
    • (1948) Phys. Rev , vol.74 , pp. 231-232
    • Brattain, W.H.1    Bardeen, J.2
  • 26
    • 84944485155 scopus 로고
    • Theory of p-n junctions
    • Jul
    • W. Shockley, "Theory of p-n junctions," Bell Syst. Tech. J. vol. 29, pp. 435-489, Jul. 1949.
    • (1949) Bell Syst. Tech. J , vol.29 , pp. 435-489
    • Shockley, W.1
  • 28
    • 46749086869 scopus 로고
    • Physics of electronic semiconductors
    • Jul
    • G. L. Pearson, "Physics of electronic semiconductors," Elect. Eng. vol. 66, no. 7, pp. 638-642, Jul. 1947.
    • (1947) Elect. Eng , vol.66 , Issue.7 , pp. 638-642
    • Pearson, G.L.1
  • 29
    • 3743099679 scopus 로고
    • Pressure dependence of resistance of germanium
    • Dec. 1
    • J. H. Taylor, "Pressure dependence of resistance of germanium," Phys. Rev., vol. 80, no. 5, pp. 919-920, Dec. 1, 1950.
    • (1950) Phys. Rev , vol.80 , Issue.5 , pp. 919-920
    • Taylor, J.H.1
  • 30
    • 33751568943 scopus 로고
    • Temperature dependence of energy gap in semiconductors
    • Jun. 15
    • H. Y. Fan, "Temperature dependence of energy gap in semiconductors," Phys. Rev., vol. 82, no. 6, pp. 900-905, Jun. 15, 1951.
    • (1951) Phys. Rev , vol.82 , Issue.6 , pp. 900-905
    • Fan, H.Y.1
  • 31
    • 0346506367 scopus 로고
    • The mobility and life of injected holes and electrons in germanium
    • May
    • J. R. Haynes and W. Shockley, "The mobility and life of injected holes and electrons in germanium," Phys. Rev., vol. 81, no. 5, pp. 835-843, May 1951.
    • (1951) Phys. Rev , vol.81 , Issue.5 , pp. 835-843
    • Haynes, J.R.1    Shockley, W.2
  • 32
    • 33744549004 scopus 로고
    • Injected light emission of silicon carbide crystals
    • Aug
    • K. Lehovec, C. A. Accardo, and E. Jamgochian, "Injected light emission of silicon carbide crystals," Phys. Rev., vol. 83, no. 3, pp. 603-607, Aug. 1951.
    • (1951) Phys. Rev , vol.83 , Issue.3 , pp. 603-607
    • Lehovec, K.1    Accardo, C.A.2    Jamgochian, E.3
  • 33
    • 0031165981 scopus 로고    scopus 로고
    • The origins of the pn junction
    • Jun
    • M. Riordan and L. Hoddeson, "The origins of the pn junction," IEEE Spectrum, vol. 34, no. 6, pp. 46-51, Jun. 1997.
    • (1997) IEEE Spectrum , vol.34 , Issue.6 , pp. 46-51
    • Riordan, M.1    Hoddeson, L.2
  • 34
    • 0009366023 scopus 로고
    • Physical principles involved in transistor action
    • Apr. 15
    • J. Bardeen and W. Brattain, "Physical principles involved in transistor action," Phys. Rev., vol. 75, no. 8, pp. 1208-1225, Apr. 15, 1949.
    • (1949) Phys. Rev , vol.75 , Issue.8 , pp. 1208-1225
    • Bardeen, J.1    Brattain, W.2
  • 35
    • 36149018587 scopus 로고    scopus 로고
    • L. Esaki, New phenomenon in narrow germanium P - N junctions, Phys. Rev., 109, no. 2, pp. 603-604, Jan. 15, 1958.
    • L. Esaki, "New phenomenon in narrow germanium P - N junctions," Phys. Rev., vol. 109, no. 2, pp. 603-604, Jan. 15, 1958.
  • 36
    • 35148886794 scopus 로고
    • Photon-radiative recombination of electrom and holes in germanium
    • Jun. 15
    • W. van Roosbroeck and W. Shockley, "Photon-radiative recombination of electrom and holes in germanium," Phys. Rev. vol. 94, no. 6, pp. 1558-1560, Jun. 15, 1954.
    • (1954) Phys. Rev , vol.94 , Issue.6 , pp. 1558-1560
    • van Roosbroeck, W.1    Shockley, W.2
  • 37
    • 84932953542 scopus 로고
    • New photoelectric devices using carrier injection
    • Nov
    • K. Lehovec, "New photoelectric devices using carrier injection," Proc. IRE, vol. 43, no. 11, pp. 1407-1409, Nov. 1952.
    • (1952) Proc. IRE , vol.43 , Issue.11 , pp. 1407-1409
    • Lehovec, K.1
  • 38
    • 46749117389 scopus 로고    scopus 로고
    • J. R. Haynes and H. B. Briggs, Radiation produced in germanium and silicon by electron-hole recombination, Phys. Rev., 86, no. 4, p. 647, May 1952, see also Paper I3, presented at the 1952 March Meeting of the American Physical Society, March 20-22, 1952.
    • J. R. Haynes and H. B. Briggs, "Radiation produced in germanium and silicon by electron-hole recombination," Phys. Rev., vol. 86, no. 4, p. 647, May 1952, see also Paper I3, presented at the 1952 March Meeting of the American Physical Society, March 20-22, 1952.
  • 39
    • 46749151589 scopus 로고
    • Radiation produced in germanium and silicon by electron-hole recombination
    • J. R. Haynes and H. B. Briggs, "Radiation produced in germanium and silicon by electron-hole recombination," Bull. Amer. Phys. Soc., vol. 27, p. 14, 1952.
    • (1952) Bull. Amer. Phys. Soc , vol.27 , pp. 14
    • Haynes, J.R.1    Briggs, H.B.2
  • 40
    • 46749118190 scopus 로고
    • Sep
    • J. Election., vol. 1, no. 2, Sep. 1955.
    • (1955) J. Election , vol.1 , Issue.2
  • 41
    • 0000224102 scopus 로고
    • Indirect transitions from the valence to the conduction bands
    • R. G. Breckenridge, B. R. Russel, and E. E. Hahn, Eds, Atlantic City, NJ, Paper IIC
    • J. Bardeen, F. J. Blatt, and L. H. Hall, "Indirect transitions from the valence to the conduction bands," in Proc. 1954 Photoconductivity Conf., R. G. Breckenridge, B. R. Russel, and E. E. Hahn, Eds., Atlantic City, NJ, 1956, pp. 146-154, Paper IIC.
    • (1956) Proc. 1954 Photoconductivity Conf , pp. 146-154
    • Bardeen, J.1    Blatt, F.J.2    Hall, L.H.3
  • 42
    • 33744648436 scopus 로고
    • New radiation resulting from recombination of holes and electrons in germanium
    • J. R. Haynes, "New radiation resulting from recombination of holes and electrons in germanium," Phys. Rev., vol. 98, pp. 1866-1868, 1955.
    • (1955) Phys. Rev , vol.98 , pp. 1866-1868
    • Haynes, J.R.1
  • 43
    • 46749115344 scopus 로고    scopus 로고
    • Available
    • [Online]. Available: http://www.ieee-virtual-museum.org/collection/ people.php?id=1234770&lid=1
  • 45
    • 84941611672 scopus 로고    scopus 로고
    • H. Welker, On new semiconducting compounds. II, Zeitschrift fur Naturforschung A Astrophys., Phys. Physikal. Chem. , 8a, pp. 248-251, Nov. 1953.
    • H. Welker, "On new semiconducting compounds. II," Zeitschrift fur Naturforschung A (Astrophys., Phys. Physikal. Chem. , vol. 8a, pp. 248-251, Nov. 1953.
  • 46
    • 46749147389 scopus 로고
    • Electrical properties of grey tin, (in Russian)
    • A. I. Blum and N. A. Goryunova, "Electrical properties of grey tin," (in Russian) Doklady Akademii Nauk SSSR, vol. 75, no. 3, pp. 367-370, 1950.
    • (1950) Doklady Akademii Nauk SSSR , vol.75 , Issue.3 , pp. 367-370
    • Blum, A.I.1    Goryunova, N.A.2
  • 47
    • 46749116217 scopus 로고
    • Photoelectric characteristics of some compounds with the structure of zinc blende, (in Russian)
    • N. A. Goryunova, V. S. Grigor'eva, B. M. Konovalenko, and S. M. Ryvkin, "Photoelectric characteristics of some compounds with the structure of zinc blende," (in Russian) Zh. Tekh. Fiz., vol. 25, no. 10, pp. 1675-1682, 1955.
    • (1955) Zh. Tekh. Fiz , vol.25 , Issue.10 , pp. 1675-1682
    • Goryunova, N.A.1    Grigor'eva, V.S.2    Konovalenko, B.M.3    Ryvkin, S.M.4
  • 49
    • 0012172350 scopus 로고
    • Semiconducting intermetallic compounds
    • H. Welker, "Semiconducting intermetallic compounds," Physica, vol. 20, no. 7-12, pp. 893-909, 1954.
    • (1954) Physica , vol.20 , Issue.7-12 , pp. 893-909
    • Welker, H.1
  • 50
    • 0012442946 scopus 로고
    • Electroluminescence of GaP
    • Nov. 15
    • G. A. Wolff, R. A. Hebert, and J. D. Broder, "Electroluminescence of GaP" Phys. Rev., vol. 100, no. 4, pp. 1144-1145, Nov. 15, 1955.
    • (1955) Phys. Rev , vol.100 , Issue.4 , pp. 1144-1145
    • Wolff, G.A.1    Hebert, R.A.2    Broder, J.D.3
  • 51
    • 0042872006 scopus 로고
    • Radiative transitions in semiconductors
    • Sep. 6
    • R. Braunstein, "Radiative transitions in semiconductors," Phys. Rev., vol. 99, no. 6, pp. 1892-1893, Sep. 6, 1955.
    • (1955) Phys. Rev , vol.99 , Issue.6 , pp. 1892-1893
    • Braunstein, R.1
  • 52
    • 0034313048 scopus 로고    scopus 로고
    • Semiconductor diode luminescence and lasers - A perspective
    • Nov./Dec
    • R. H. Rediker, "Semiconductor diode luminescence and lasers - A perspective," IEEE J. Sel. Topics Quantum Electron., vol. 6, no. 6, pp. 1355-1362, Nov./Dec. 2000.
    • (2000) IEEE J. Sel. Topics Quantum Electron , vol.6 , Issue.6 , pp. 1355-1362
    • Rediker, R.H.1
  • 53
    • 0343078533 scopus 로고
    • Recombination radiation in GaAs
    • Jan
    • J. Black, H. Lockwood, and S. Mayburg, "Recombination radiation in GaAs," J. Appl. Phy., vol. 34, no. 1, pp. 178-180, Jan. 1963.
    • (1963) J. Appl. Phy , vol.34 , Issue.1 , pp. 178-180
    • Black, J.1    Lockwood, H.2    Mayburg, S.3
  • 54
    • 46749153641 scopus 로고
    • Recombination radiation entitled by gallium arsenide diodes
    • presented at the, Dutham, NH, Jul
    • R. J. Keyes and T. M. Quist, "Recombination radiation entitled by gallium arsenide diodes," presented at the Solid-State Device Research, Conf., Dutham, NH, Jul. 1962.
    • (1962) Solid-State Device Research, Conf
    • Keyes, R.J.1    Quist, T.M.2
  • 55
    • 33847446049 scopus 로고
    • Stimulated optical radiation in ruby
    • Aug. 6
    • T. H. Maiman, "Stimulated optical radiation in ruby," Nature, vol. 187, no. 4736, pp. 493-494, Aug. 6, 1960.
    • (1960) Nature , vol.187 , Issue.4736 , pp. 493-494
    • Maiman, T.H.1
  • 56
    • 0742310147 scopus 로고
    • Optical maser action in ruby
    • Sep
    • T. H. Maiman, "Optical maser action in ruby," British Commun. Elect., vol. 7, no. 9, pp. 674-675, Sep. 1960.
    • (1960) British Commun. Elect , vol.7 , Issue.9 , pp. 674-675
    • Maiman, T.H.1
  • 57
    • 36149006554 scopus 로고
    • Molecular microwave oscillator and new hyperfine structure in the microwave spectrum of NH3
    • J. P. Gordon, H. J. Zeiger, and C. H. Townes, "Molecular microwave oscillator and new hyperfine structure in the microwave spectrum of NH3," Phys. Rev., vol. 95, pp. 282-284, 1954.
    • (1954) Phys. Rev , vol.95 , pp. 282-284
    • Gordon, J.P.1    Zeiger, H.J.2    Townes, C.H.3
  • 58
    • 0000388285 scopus 로고
    • The maser-new type of microwave amplifier, frequency standard, and spectrometer
    • J. P. Gordon, H. J. Zeiger, and C. H. Townes, "The maser-new type of microwave amplifier, frequency standard, and spectrometer," Phys. Rev., vol. 99, pp. 1264-1274, 1955.
    • (1955) Phys. Rev , vol.99 , pp. 1264-1274
    • Gordon, J.P.1    Zeiger, H.J.2    Townes, C.H.3
  • 59
    • 33845310272 scopus 로고
    • Injection lasers
    • Jul
    • R. N. Hall, "Injection lasers," IEEE Trans. Elect. Dev., vol. ED-23, no. 7, Jul. 1976.
    • (1976) IEEE Trans. Elect. Dev , vol.ED-23 , Issue.7
    • Hall, R.N.1
  • 60
    • 0023364953 scopus 로고
    • Notes on the photon-disequilibrium-amplification scheme (JvN)
    • J. von Neumann, "Notes on the photon-disequilibrium-amplification scheme (JvN)," IEEE J. Quant. Electron., vol. QE-23, no. 6, pp. 658-671, 1987.
    • (1987) IEEE J. Quant. Electron , vol.QE-23 , Issue.6 , pp. 658-671
    • von Neumann, J.1
  • 61
    • 46749137404 scopus 로고
    • A light source modulated at microwave frequencies
    • Sep
    • J. Pankove and J. E. Berkeyheiser, "A light source modulated at microwave frequencies," Proc. IRE, vol. 50, no. 9, pp. 1976-1977, Sep. 1962.
    • (1962) Proc. IRE , vol.50 , Issue.9 , pp. 1976-1977
    • Pankove, J.1    Berkeyheiser, J.E.2
  • 63
    • 0031271414 scopus 로고    scopus 로고
    • The semiconductor laser: A thirty-tive-year perspective
    • Nov
    • N. Holonyak, Jr., "The semiconductor laser: A thirty-tive-year perspective," Proc. IEEE, vol. 85, no. 11, pp. 1678-1693, Nov. 1997.
    • (1997) Proc. IEEE , vol.85 , Issue.11 , pp. 1678-1693
    • Holonyak Jr., N.1
  • 64
    • 46749123305 scopus 로고    scopus 로고
    • g (300 K) ∼ 1.43 eV, corresponding to a wavelength of ∼0.867 nm.
    • g (300 K) ∼ 1.43 eV, corresponding to a wavelength of (∼0.867 nm.
  • 65
    • 46749149041 scopus 로고
    • Jun
    • IEEE J. Quant. Electron., vol. QE-23, no. 6, Jun. 1987.
    • (1987) IEEE J. Quant. Electron , vol.QE-23 , Issue.6
  • 66
    • 0345093549 scopus 로고
    • Halogen vapor transport and growth of epitaxial layers of intermetallic compounds and compound mixtures
    • J. B. Schroeder, Ed. New York: Interscience
    • N Holonyak, Jr., D. C. Jillson, and S. F. Bevacqua, "Halogen vapor transport and growth of epitaxial layers of intermetallic compounds and compound mixtures," in Metallurgy of Semiconductor Materials, J. B. Schroeder, Ed. New York: Interscience, 1961, vol. 15, pp. 49-59.
    • (1961) Metallurgy of Semiconductor Materials , vol.15 , pp. 49-59
    • Holonyak Jr., N.1    Jillson, D.C.2    Bevacqua, S.F.3
  • 67
    • 33745521344 scopus 로고    scopus 로고
    • R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, Coherent light mission from GaAs junctions, Phys. Rev. Lett., 9, no. 9, pp. 366-368, Nov. 1, 1962, The Editor of Phys. Rev. received this paper on September 24, 1962.
    • R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, "Coherent light mission from GaAs junctions," Phys. Rev. Lett., vol. 9, no. 9, pp. 366-368, Nov. 1, 1962, The Editor of Phys. Rev. received this paper on September 24, 1962.
  • 68
    • 46749140098 scopus 로고    scopus 로고
    • Private Communication Sep
    • N. Holonyak, Jr., Private Communication Sep. 2002.
    • (2002)
    • Holonyak Jr., N.1
  • 69
    • 36849140385 scopus 로고    scopus 로고
    • N. Holonyak, Jr. and S. F. Bevacqua, Coherent (visible) light emission from Ga(AsP) junctions, Appl. Phys. Lett., 1, pp. 82-83, Dec. 1, 1962, Holonyak's paper was received by the Editor of Appl. Phyds. Lett. on October 17, 1962.
    • N. Holonyak, Jr. and S. F. Bevacqua, "Coherent (visible) light emission from Ga(AsP) junctions," Appl. Phys. Lett., vol. 1, pp. 82-83, Dec. 1, 1962, Holonyak's paper was received by the Editor of Appl. Phyds. Lett. on October 17, 1962.
  • 70
    • 0034313069 scopus 로고    scopus 로고
    • From the transistor to III-V alloy semiconductors: The laser and light emitting diode
    • Nov./Dec
    • N. Holonyak, Jr., "From the transistor to III-V alloy semiconductors: The laser and light emitting diode," IEEE J. Sel. Topics Quant. Electron., vol. 6, no. 6, pp. 1190-1200, Nov./Dec. 2000.
    • (2000) IEEE J. Sel. Topics Quant. Electron , vol.6 , Issue.6 , pp. 1190-1200
    • Holonyak Jr., N.1
  • 71
    • 0023363571 scopus 로고
    • Semiconductor alloy lasers - 1962
    • Jun
    • N. Holonyak, Jr., "Semiconductor alloy lasers - 1962," IEEE J. Quant. Electron., vol. QE-23, no. 6, pp. 684-691, Jun. 1987.
    • (1987) IEEE J. Quant. Electron , vol.QE-23 , Issue.6 , pp. 684-691
    • Holonyak Jr., N.1
  • 72
    • 0023363779 scopus 로고
    • An introduction to the development of the semiconductor laser
    • R. D. Dupuis, "An introduction to the development of the semiconductor laser." IEEE J. Ouantum Electron., vol. QE-23. no. 6. pp. 651-657, 1987.
    • (1987) IEEE J. Ouantum Electron , vol.QE-23 , Issue.6 , pp. 651-657
    • Dupuis, R.D.1
  • 73
    • 36849122958 scopus 로고    scopus 로고
    • N. Holonyak, Jr., S. F. Bevacqua, C. V. Bielan, and S. J. Lubowski, The 'direct-indirect'transition in Ga(As1-xPx) p-n junctions, Appl. Phys. Lett., 3, pp. 47-49, Aug. 1, 1963.
    • N. Holonyak, Jr., S. F. Bevacqua, C. V. Bielan, and S. J. Lubowski, "The 'direct-indirect'transition in Ga(As1-xPx) p-n junctions," Appl. Phys. Lett., vol. 3, pp. 47-49, Aug. 1, 1963.
  • 74
  • 75
    • 0002925617 scopus 로고
    • Circuit element utilizing semiconductive material,
    • U.S. Patent 2 569 347, filed June 26, 1948, issued September 25
    • W. Shockley, "Circuit element utilizing semiconductive material," U.S. Patent 2 569 347, 1951, filed June 26, 1948, issued September 25.
    • (1951)
    • Shockley, W.1
  • 76
    • 84938006654 scopus 로고
    • Theory of wide-gap emitter for transistor
    • Nov
    • H. Kroemer, "Theory of wide-gap emitter for transistor," Proc. IRE vol. 45, no. 11, pp. 1535-1537, Nov. 1957.
    • (1957) Proc. IRE , vol.45 , Issue.11 , pp. 1535-1537
    • Kroemer, H.1
  • 77
    • 0001242106 scopus 로고
    • Germanium-gallium arsenide heterojunctions
    • Jul
    • R. L. Anderson, "Germanium-gallium arsenide heterojunctions," IBM J. Res. Devel., vol. 4, no. 3, pp. 283-287, Jul. 1960.
    • (1960) IBM J. Res. Devel , vol.4 , Issue.3 , pp. 283-287
    • Anderson, R.L.1
  • 78
    • 84892276380 scopus 로고
    • A proposed class of heterojunction injection lasers
    • H. Kroemer, "A proposed class of heterojunction injection lasers," Proc. IEEE, vol. 51, pp. 1782-1783, 1963.
    • (1963) Proc. IEEE , vol.51 , pp. 1782-1783
    • Kroemer, H.1
  • 79
    • 46749084056 scopus 로고    scopus 로고
    • R. P. Ruth, J. C. Marinace, and W. C. Dunlap, Jr., Vapor-deposited single-crystal germanium, presented at the Amer. Physical Soc. Meeting, New Haven, CT, Jun. 1956, Also reported at the Electrochem. Soc. Semicond. Symp., Cleveland OH, October 3, 1956R. P. Ruth, J. C. Marinace, and W. C. Dunlap, Jr., Vapor-deposited Single-crystal germanium,.
    • R. P. Ruth, J. C. Marinace, and W. C. Dunlap, Jr., "Vapor-deposited single-crystal germanium," presented at the Amer. Physical Soc. Meeting, New Haven, CT, Jun. 1956, Also reported at the Electrochem. Soc. Semicond. Symp., Cleveland OH, October 3, 1956R. P. Ruth, J. C. Marinace, and W. C. Dunlap, Jr., "Vapor-deposited Single-crystal germanium,".
  • 81
    • 36849127520 scopus 로고    scopus 로고
    • R. P. Ruth, J. C. Marinace, and W. C. Dunlap, Jr., Vapor-deposited single-crystal germanium, J. Appl. Phys., 31, no. 6, pp. 995-1006, Jun. 1960.
    • R. P. Ruth, J. C. Marinace, and W. C. Dunlap, Jr., "Vapor-deposited single-crystal germanium," J. Appl. Phys., vol. 31, no. 6, pp. 995-1006, Jun. 1960.
  • 82
    • 46749151196 scopus 로고
    • Epitaxial growth of silicon
    • Jul
    • E. S. Wajda, B. W. Kippenhan, and W. H. White, "Epitaxial growth of silicon," IBM J. Res. Devel., vol. 4, no. 3, pp. 288-295, Jul. 1960.
    • (1960) IBM J. Res. Devel , vol.4 , Issue.3 , pp. 288-295
    • Wajda, E.S.1    Kippenhan, B.W.2    White, W.H.3
  • 83
    • 46749112475 scopus 로고
    • Epitaxial vapor growth of ge single crystals in a closed-cycle process
    • Jul
    • J. C. Marinace, "Epitaxial vapor growth of ge single crystals in a closed-cycle process," IBM J. Res. Devel., vol. 4, no. 3, pp. 248-255, Jul. 1960.
    • (1960) IBM J. Res. Devel , vol.4 , Issue.3 , pp. 248-255
    • Marinace, J.C.1
  • 84
    • 0542414854 scopus 로고
    • Tunnel diodes by vapor growth of ge on ge and on GaAs
    • Jul
    • J. C. Marinace, "Tunnel diodes by vapor growth of ge on ge and on GaAs," IBM J. Res. Devel., vol. 4. no. 3. pp. 280-282, Jul. 1960.
    • (1960) IBM J. Res. Devel , vol.4 , Issue.3 , pp. 280-282
    • Marinace, J.C.1
  • 85
    • 0000302477 scopus 로고
    • Epitaxial growth from the liquid state and its application to the fabrication of tunnel and laser diodes
    • Dec
    • R. Nelson, "Epitaxial growth from the liquid state and its application to the fabrication of tunnel and laser diodes," RCA Rev., pp. 603-615, Dec. 1963.
    • (1963) RCA Rev , pp. 603-615
    • Nelson, R.1
  • 86
    • 36149006737 scopus 로고
    • Conduction band structure of germanium-silicon alloys
    • Dec
    • M. Glicksman and S. M. Christian, "Conduction band structure of germanium-silicon alloys," Phys. Rev., vol. 104, pp. 1278-1279, Dec. 1956.
    • (1956) Phys. Rev , vol.104 , pp. 1278-1279
    • Glicksman, M.1    Christian, S.M.2
  • 87
    • 46749095297 scopus 로고    scopus 로고
    • Private Communication Feb
    • N. Holonyak, Jr., Private Communication Feb. 2008.
    • (2008)
    • Holonyak Jr., N.1
  • 88
    • 0005501408 scopus 로고
    • P - N junctions prepared by impurity diffusion
    • Nov. 1
    • R. N. Hall and W. C. Dunlap, "P - N junctions prepared by impurity diffusion," Phys. Rev., vol. 80, no. 3, pp. 467-468, Nov. 1, 1950.
    • (1950) Phys. Rev , vol.80 , Issue.3 , pp. 467-468
    • Hall, R.N.1    Dunlap, W.C.2
  • 89
    • 46749104301 scopus 로고
    • Laser action in Ga(Asl-xPx) and GaAs
    • Jan
    • N. Holonyak, Jr., "Laser action in Ga(Asl-xPx) and GaAs," Proc. IEEE, vol. 52, no. 1, p. 104, Jan. 1964.
    • (1964) Proc. IEEE , vol.52 , Issue.1 , pp. 104
    • Holonyak Jr., N.1
  • 90
    • 46749122872 scopus 로고    scopus 로고
    • Altering proportions in a vapor deposition process to form a mixed crystal graded energy gap,
    • U.S. Patent 3 224913, patent assigned to Monsanto Company, filed July 31, 1961, issued Dec. 21, 1965
    • R. A. Ruehrwein, "Altering proportions in a vapor deposition process to form a mixed crystal graded energy gap," U.S. Patent 3 224913, (patent assigned to Monsanto Company), filed July 31, 1961, issued Dec. 21, 1965.
    • Ruehrwein, R.A.1
  • 91
    • 46749106555 scopus 로고    scopus 로고
    • Production of epitaxial films of semiconductor compound material,
    • U.S. Patent 3 312570, filed May 29, 1961, issued Apr. 4, 1967
    • R. A. Ruehrwein, "Production of epitaxial films of semiconductor compound material," U.S. Patent 3 312570, filed May 29, 1961, issued Apr. 4, 1967.
    • Ruehrwein, R.A.1
  • 92
    • 85029312127 scopus 로고    scopus 로고
    • Production of epitaxial Films,
    • U.S. Patent No. 3 312571, filed Oct. 9, 1961, issued Apr. 4, 1967
    • R. A. Ruehrwein, "Production of epitaxial Films," U.S. Patent No. 3 312571, filed Oct. 9, 1961, issued Apr. 4, 1967.
    • Ruehrwein, R.A.1
  • 93
    • 84967453829 scopus 로고
    • The preparation and properties of vapor-deposited epitaxial GaAs1-xPx using arsine and phosphine
    • J. J. Tietjen and J. A. Amick, "The preparation and properties of vapor-deposited epitaxial GaAs1-xPx using arsine and phosphine," J. Electrochem. Soc., vol. 113, no. 7, pp. 724-728, 1966.
    • (1966) J. Electrochem. Soc , vol.113 , Issue.7 , pp. 724-728
    • Tietjen, J.J.1    Amick, J.A.2
  • 94
    • 36049058163 scopus 로고
    • Isoelectronic traps due to nitrogen in gallium phosphide
    • Oct. 14
    • D. G. Thomas and J. J. Hopfield, "Isoelectronic traps due to nitrogen in gallium phosphide," Phys. Rev., vol. 150, no. 2, pp. 680-689, Oct. 14, 1966.
    • (1966) Phys. Rev , vol.150 , Issue.2 , pp. 680-689
    • Thomas, D.G.1    Hopfield, J.J.2
  • 95
    • 36849115107 scopus 로고
    • Radiative pair recombination and surface recombination in Gap photoluminescence
    • May 15
    • W. Gershenzon and R. M. Mikulyak, "Radiative pair recombination and surface recombination in Gap photoluminescence," Appl. Phys. Lett. vol. 8, no. 10, pp. 245-247, May 15, 1966.
    • (1966) Appl. Phys. Lett , vol.8 , Issue.10 , pp. 245-247
    • Gershenzon, W.1    Mikulyak, R.M.2
  • 96
    • 0017514499 scopus 로고
    • Recent developments in light-emitting-diode technology
    • Jul
    • M. G. Craford, "Recent developments in light-emitting-diode technology," IEEE Trans. Electron Dev., vol. ED-24, no. 7, pp. 935-43, Jul. 1977.
    • (1977) IEEE Trans. Electron Dev , vol.ED-24 , Issue.7 , pp. 935-943
    • Craford, M.G.1
  • 97
    • 0001846149 scopus 로고
    • Efficient visible electroluminescence at 300 K from GaAlAs p-n junctions grown by liquid-phase epitaxy
    • H. Rupprecht, J. M. Woodall, and G. D. Petit, "Efficient visible electroluminescence at 300 K from GaAlAs p-n junctions grown by liquid-phase epitaxy," Appl. Phys. Lett., vol. 11, no. 3, pp. 81-83, 1967.
    • (1967) Appl. Phys. Lett , vol.11 , Issue.3 , pp. 81-83
    • Rupprecht, H.1    Woodall, J.M.2    Petit, G.D.3
  • 99
    • 0001041015 scopus 로고
    • Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and reanzation of continuous emission at room temperature
    • Sep
    • Z. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Y. V. Zhilyaev, F. P. Morozov, E. L. Portnoi, and V. G. Trofim, "Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and reanzation of continuous emission at room temperature," Fiz. Tekh. Poluprov., vol. 4, no. 9, pp. 1826-1829, Sep. 1970.
    • (1970) Fiz. Tekh. Poluprov , vol.4 , Issue.9 , pp. 1826-1829
    • Alferov, Z.I.1    Andreev, V.M.2    Garbuzov, D.Z.3    Zhilyaev, Y.V.4    Morozov, F.P.5    Portnoi, E.L.6    Trofim, V.G.7
  • 101
    • 0014869123 scopus 로고
    • AlxGal-xAs1- y'Py'-GaAsl-yPy heterostructure, laser and lamp junctions
    • Nov. 15
    • R. D. Burnham, N. Holonyak, Jr., and D. R. Scifres, "AlxGal-xAs1- y'Py'-GaAsl-yPy heterostructure, laser and lamp junctions," Appl. Phys. Lett., vol. 17, pp. 455-457, Nov. 15, 1970.
    • (1970) Appl. Phys. Lett , vol.17 , pp. 455-457
    • Burnham, R.D.1    Holonyak Jr., N.2    Scifres, D.R.3
  • 102
    • 36849115859 scopus 로고
    • Optically pumped volume-excited cw room-temperature In1-xGaxP (x < 0.60) Platelet lasers
    • D. R. Scifres, N. Holonyak, Jr., H. M. Macksey, and R. D. Dupuis, "Optically pumped volume-excited cw room-temperature In1-xGaxP (x < 0.60) Platelet lasers," Appl. Phys. Lett., vol. 20, no. 5, pp. 184-186, 1972.
    • (1972) Appl. Phys. Lett , vol.20 , Issue.5 , pp. 184-186
    • Scifres, D.R.1    Holonyak Jr., N.2    Macksey, H.M.3    Dupuis, R.D.4
  • 103
    • 0345548096 scopus 로고
    • Optically pumped in 1-xGaxP platelet lasers from the infrared to the yellow (8900-5800Å, 77°K)
    • Mar
    • D. R. Scifres, H. M. Macksey, N. Holonyak, Jr., and R. D. Dupuis, "Optically pumped in 1-xGaxP platelet lasers from the infrared to the yellow (8900-5800Å, 77°K)," J. Appl. Phys., vol. 43, pp. 1019-1022, Mar. 1972.
    • (1972) J. Appl. Phys , vol.43 , pp. 1019-1022
    • Scifres, D.R.1    Macksey, H.M.2    Holonyak Jr., N.3    Dupuis, R.D.4
  • 104
    • 0020750974 scopus 로고
    • The growth of magnesium-doped GaAs by the OM-VPE process
    • May
    • C. R. Lewis, W. T. Dietze, and M. J. Ludowise, "The growth of magnesium-doped GaAs by the OM-VPE process," J. Electron. Mater., vol. 12, no. 3, pp. 507-524, May 1983.
    • (1983) J. Electron. Mater , vol.12 , Issue.3 , pp. 507-524
    • Lewis, C.R.1    Dietze, W.T.2    Ludowise, M.J.3
  • 105
    • 0039627656 scopus 로고
    • MOCVD growth of algainp at atmospheric pressure using triethylmetals and phosphine
    • Sep
    • M. Ikeda, K. Nakano, Y. Mori, K. Kaneko, and N. Watanabe, "MOCVD growth of algainp at atmospheric pressure using triethylmetals and phosphine," J. Cryst. Growth, vol. 77, no. 1-3, pp. 380-385, Sep. 1986.
    • (1986) J. Cryst. Growth , vol.77 , Issue.1-3 , pp. 380-385
    • Ikeda, M.1    Nakano, K.2    Mori, Y.3    Kaneko, K.4    Watanabe, N.5
  • 106
    • 0042959817 scopus 로고
    • Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition
    • M. Ikeda, Y. Mori, H. Sato, K. Kaneko, and N. Watanabe, "Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 47, no. 10, pp. 1027-1028, 1985.
    • (1985) Appl. Phys. Lett , vol.47 , Issue.10 , pp. 1027-1028
    • Ikeda, M.1    Mori, Y.2    Sato, H.3    Kaneko, K.4    Watanabe, N.5
  • 107
    • 0028530007 scopus 로고    scopus 로고
    • F. A. Kish, D. A. DeFevere, D. A. Vanderwater,G. R. Trott, R. J. Weiss, and J. S. Major, Jr., High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters, Electron. Lett., 30, no. 21, pp. 1790-2, Oct. 13, 1994.
    • F. A. Kish, D. A. DeFevere, D. A. Vanderwater,G. R. Trott, R. J. Weiss, and J. S. Major, Jr., "High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters," Electron. Lett., vol. 30, no. 21, pp. 1790-2, Oct. 13, 1994.
  • 109
    • 0010436436 scopus 로고
    • Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer
    • K. H. Huang, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, L. J. Stinson, M. G. Craford, and A. S. H. Liao, "Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer," Appl. Phys. Lett., vol. 61, pp. 1045-1047, 1992.
    • (1992) Appl. Phys. Lett , vol.61 , pp. 1045-1047
    • Huang, K.H.1    Yu, J.G.2    Kuo, C.P.3    Fletcher, R.M.4    Osentowski, T.D.5    Stinson, L.J.6    Craford, M.G.7    Liao, A.S.H.8
  • 110
    • 0026372757 scopus 로고
    • Growth and properties of high performance AlGaInP emitters using a lattice mismatched GaP window layer
    • Dec
    • R. M. Fletcher, C. P. Kuo, T. D. Osentowski, K. H. Huang, M. G. Craford, and V. M. Robbins, "Growth and properties of high performance AlGaInP emitters using a lattice mismatched GaP window layer," J. Electron. Mater., vol. 20, no. 12, pp. 1125-1130, Dec. 1991.
    • (1991) J. Electron. Mater , vol.20 , Issue.12 , pp. 1125-1130
    • Fletcher, R.M.1    Kuo, C.P.2    Osentowski, T.D.3    Huang, K.H.4    Craford, M.G.5    Robbins, V.M.6
  • 112
  • 117
    • 0347219348 scopus 로고
    • Violet luminescence of mg-doped GaN [light-emitting diode properties]
    • Mar. 15
    • H. P. Maruska, D. Stevenson, and J. I. Pankove, "Violet luminescence of mg-doped GaN [light-emitting diode properties]," Appl. Phys. Lett. vol. 22, no. 6, pp. 303-5, Mar. 15, 1973.
    • (1973) Appl. Phys. Lett , vol.22 , Issue.6 , pp. 303-305
    • Maruska, H.P.1    Stevenson, D.2    Pankove, J.I.3
  • 118
    • 0016553280 scopus 로고
    • Low-voltage blue electroluminescence in GaN
    • Sep
    • J. I. Pankove, "Low-voltage blue electroluminescence in GaN," IEEE Trans. Electron Dev., vol. ED-22, no. 9, pp. 721-724, Sep. 1975.
    • (1975) IEEE Trans. Electron Dev , vol.ED-22 , Issue.9 , pp. 721-724
    • Pankove, J.I.1
  • 119
    • 0015100033 scopus 로고
    • Stimulated emission and laser action in gallium nitride
    • R. Dingle, K. L. Shaklee, R. F. Leheny, and R. B. Zetterstrom, "Stimulated emission and laser action in gallium nitride," Appl. Phys. Lett., vol. 19, no. 1, pp. 5-7, 1971.
    • (1971) Appl. Phys. Lett , vol.19 , Issue.1 , pp. 5-7
    • Dingle, R.1    Shaklee, K.L.2    Leheny, R.F.3    Zetterstrom, R.B.4
  • 120
    • 84956227761 scopus 로고
    • The use of metalorganics in the preparation of semiconductor materials. IV. the nitrides of aluminum and gallium
    • H. M. Manasevit, F. M. Erdman, and W. I. Simpson, "The use of metalorganics in the preparation of semiconductor materials. IV. the nitrides of aluminum and gallium," J. Electrochem. Soc., vol. 118, no. 11, pp. 1864-1868, 1971.
    • (1971) J. Electrochem. Soc , vol.118 , Issue.11 , pp. 1864-1868
    • Manasevit, H.M.1    Erdman, F.M.2    Simpson, W.I.3
  • 121
    • 0023040588 scopus 로고
    • Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
    • H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett., vol. 48, pp. 353-355, 1986.
    • (1986) Appl. Phys. Lett , vol.48 , pp. 353-355
    • Amano, H.1    Sawaki, N.2    Akasaki, I.3    Toyoda, Y.4
  • 123
    • 84883188181 scopus 로고
    • p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
    • Dec
    • H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, "p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)," Jpn. J. Appl. Phys., vol. 28, no. 12, pt. 2, pp. L2112-14, Dec. 1989.
    • (1989) Jpn. J. Appl. Phys , vol.28 , Issue.12
    • Amano, H.1    Kito, M.2    Hiramatsu, K.3    Akasaki, I.4
  • 124
    • 0025388719 scopus 로고
    • Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer
    • Feb
    • H. Amano, T. Asahi, and I. Akasaki, "Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer," Jpn. J. Appl. Phys., vol. 29, no. 2, pt. 2, pp. L205-206, Feb. 1990.
    • (1990) Jpn. J. Appl. Phys , vol.29 , Issue.2
    • Amano, H.1    Asahi, T.2    Akasaki, I.3
  • 125
    • 0026241977 scopus 로고
    • Highly P-typed Mg-doped GaN films grown with GaN buffer layers
    • Oct. 1
    • S. Nakamura, M. Senoh, and T. Mukai, "Highly P-typed Mg-doped GaN films grown with GaN buffer layers," JpnJ. Appl. Phys., vol. 30, no. 10A, pt. 2, pp. L1708-11, Oct. 1, 1991.
    • (1991) JpnJ. Appl. Phys , vol.30 , Issue.10A PART 2
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 126
    • 0026406592 scopus 로고    scopus 로고
    • S. Nakamura, T. Mukai, and M. Senoh, High-power GaN P - N junction blue-light-emitting diodes, Jpn. J. Appl. Phys., 30, no. 12A, pt. 2, pp. L1998-20011, Dec. 1991.
    • S. Nakamura, T. Mukai, and M. Senoh, "High-power GaN P - N junction blue-light-emitting diodes," Jpn. J. Appl. Phys., vol. 30, no. 12A, pt. 2, pp. L1998-20011, Dec. 1991.
  • 127
    • 0026819254 scopus 로고
    • Thermal annelaing effects on p-type Mg-doped GaN films
    • Feb
    • S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal annelaing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys., vol. 31, no. 2B, pt. 2, pp. L139-4215, Feb. 1992.
    • (1992) Jpn. J. Appl. Phys , vol.31 , Issue.2B PART 2
    • Nakamura, S.1    Mukai, T.2    Senoh, M.3    Iwasa, N.4
  • 128
    • 46749152002 scopus 로고    scopus 로고
    • Proc. Int. Workshop on Nitride Semiconductors, 2007
    • Physica Status Solidi b, Hoboken, NJ: Wiley InterScience, to be published
    • Proc. Int. Workshop on Nitride Semiconductors, 2007, ser. Physica Status Solidi (b). Hoboken, NJ: Wiley InterScience, to be published.
    • ser
  • 129
    • 0014614521 scopus 로고
    • The use of metalorganics in the preparation of semiconductor materials: I. epitaxial gallium-v compounds
    • H. M. Manasevit and W. I. Simpson, "The use of metalorganics in the preparation of semiconductor materials: I. epitaxial gallium-v compounds," J. Electrochem. Soc., vol. 116, no. 12, pp. 1725-1732, 1969.
    • (1969) J. Electrochem. Soc , vol.116 , Issue.12 , pp. 1725-1732
    • Manasevit, H.M.1    Simpson, W.I.2
  • 130
    • 84971912824 scopus 로고
    • The use of metalorganics in the preparation of semiconductor materials: III. studies of III-V aluminum compound formation using trimethylaluminum
    • H. M. Manasevit, "The use of metalorganics in the preparation of semiconductor materials: III. studies of III-V aluminum compound formation using trimethylaluminum," J. Electrochem. Soc., vol. 118, no 4, pp. 647-650, 1971.
    • (1971) J. Electrochem. Soc , vol.118 , Issue.4 , pp. 647-650
    • Manasevit, H.M.1
  • 131
    • 0344813256 scopus 로고
    • The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates
    • H. M. Manasevit, "The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates," J. Cryst. Growth, vol. 13/14, pp. 306-314, 1972.
    • (1972) J. Cryst. Growth , vol.13-14 , pp. 306-314
    • Manasevit, H.M.1
  • 132
    • 46749101933 scopus 로고    scopus 로고
    • H. M. Manasevit/Rockwell International Corp, Epitaxial Composite and Method of Making, U.S. Patent No. 4 368098, filed Apr. 7, 1978, issued Jan. 11, 1983
    • H. M. Manasevit/Rockwell International Corp., "Epitaxial Composite and Method of Making," U.S. Patent No. 4 368098, filed Apr. 7, 1978, issued Jan. 11, 1983.
  • 133
    • 46749097776 scopus 로고    scopus 로고
    • Rockwell MOCVD patent ruled invalid
    • Mar./Apr
    • "Rockwell MOCVD patent ruled invalid," Compound Semiconductor, pp. 14-15, Mar./Apr. 1997.
    • (1997) Compound Semiconductor , pp. 14-15
  • 134
    • 46749157142 scopus 로고    scopus 로고
    • Metalorganic chemical vapor deposition (MOCVD)
    • Third Edition, New York: Academic
    • R. D. Dupuis, "Metalorganic chemical vapor deposition (MOCVD)," in Encyclopedia of Physical Science and Technology Third Edition, New York: Academic, 2002, vol. 9.
    • (2002) Encyclopedia of Physical Science and Technology , vol.9
    • Dupuis, R.D.1
  • 135
    • 46749135014 scopus 로고    scopus 로고
    • J. H. Ryou, R. Kanjolia, and R. D. Dupuis, CVD of III-V compound semiconductors, in Chemical Vapor Deposition, ser. Chemical Vapour Deposition, Precursors and Processes. London, U.K.: Royal Soc. Chem., ch. 6, to be published.
    • J. H. Ryou, R. Kanjolia, and R. D. Dupuis, "CVD of III-V compound semiconductors," in Chemical Vapor Deposition, ser. Chemical Vapour Deposition, Precursors and Processes. London, U.K.: Royal Soc. Chem., ch. 6, to be published.
  • 137
    • 46749108650 scopus 로고
    • Room-temperature operation of Ga(1-x)A1xAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition
    • Sep
    • R. D. Dupuis and P. D. Dapkus, "Room-temperature operation of Ga(1-x)A1xAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition," IEEE Trans. Electron Dev., vol. ED-24, no. 9, pp. 1195-1196, Sep. 1977.
    • (1977) IEEE Trans. Electron Dev , vol.ED-24 , Issue.9 , pp. 1195-1196
    • Dupuis, R.D.1    Dapkus, P.D.2
  • 138
    • 0034313056 scopus 로고    scopus 로고
    • III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition
    • Nov./Dec
    • R. D. Dupuis, "III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition," IEEE J. Sel. Topics Quant. Electron., vol. 6, no. 6, pp. 1040-1050, Nov./Dec. 2000.
    • (2000) IEEE J. Sel. Topics Quant. Electron , vol.6 , Issue.6 , pp. 1040-1050
    • Dupuis, R.D.1
  • 139
    • 0000793631 scopus 로고
    • Room-temperature laser operation of quantum-well gal-xAlxAs-GaAs laser diodes grown by metalorganic chemical vapor deposition
    • R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., E. A. Rezek, and R. Chin, "Room-temperature laser operation of quantum-well gal-xAlxAs-GaAs laser diodes grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 32, no. 5, pp. 295-297, 1978.
    • (1978) Appl. Phys. Lett , vol.32 , Issue.5 , pp. 295-297
    • Dupuis, R.D.1    Dapkus, P.D.2    Holonyak Jr., N.3    Rezek, E.A.4    Chin, R.5
  • 140
    • 11344264607 scopus 로고
    • Low-threshold continuous laser operation (300-337 K) of multilayer MO-CVD AlxGal-xAs-GaAs quantum-well heterostructures
    • N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, "Low-threshold continuous laser operation (300-337 K) of multilayer MO-CVD AlxGal-xAs-GaAs quantum-well heterostructures," Appl. Phys. Lett., vol. 33, no. 8, pp. 737-739, 1978.
    • (1978) Appl. Phys. Lett , vol.33 , Issue.8 , pp. 737-739
    • Holonyak Jr., N.1    Kolbas, R.M.2    Laidig, W.D.3    Vojak, B.A.4    Dupuis, R.D.5    Dapkus, P.D.6
  • 141
    • 0020798353 scopus 로고
    • Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates, (< 1%/KH) at 70°C
    • Aug
    • R. D. Dupuis, R. L. Hartman, and F. R. Nash, "Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates, (< 1%/KH) at 70°C," IEEE Electron Device Lett., vol. EDL-4, no. 8, pp. 286-288, Aug. 1983.
    • (1983) IEEE Electron Device Lett , vol.EDL-4 , Issue.8 , pp. 286-288
    • Dupuis, R.D.1    Hartman, R.L.2    Nash, F.R.3
  • 144
    • 51149220122 scopus 로고
    • 30% external quantum efficiency from surface textured, thin-film light-emitting diodes
    • I. Schnitzer and E. Yablonovitch, "30% external quantum efficiency from surface textured, thin-film light-emitting diodes," Appl. Phys. Lett., vol. 63, pp. 2174-2176, 1993.
    • (1993) Appl. Phys. Lett , vol.63 , pp. 2174-2176
    • Schnitzer, I.1    Yablonovitch, E.2
  • 147
    • 34249300144 scopus 로고    scopus 로고
    • Performance of high power light-emitting diodes in display applications
    • Jun
    • G. Harbers, S. Bierhuizen, and M. R. Krames, "Performance of high power light-emitting diodes in display applications," J. Display Technol. vol. 3, no. 2, Jun. 2007.
    • (2007) J. Display Technol , vol.3 , Issue.2
    • Harbers, G.1    Bierhuizen, S.2    Krames, M.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.