Thermal stability analysis of High Brightness LED during high temperature and electrical aging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6669, Issue , 2007, Pages

  Trevisanello, L R ^a   Meneghini, M ^a   Mura, G ^b   Sanna, C ^a   Buso, S ^a   Spiazzi, G ^a   Vanzr, M ^b   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

Degradation; Gallium nitride; HBLEDs; Reliability; Thermal characterization

Indexed keywords

HEAT RESISTANCE; HIGH TEMPERATURE EFFECTS; PHOSPHORS; THERMAL STRESS; THERMODYNAMIC STABILITY;

ELECTRICAL AGING; OPTICAL CHARACTERIZATION;

LIGHT EMITTING DIODES;

EID: 42149135935     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.732398     Document Type: Conference Paper

References (12)

1. S. P. DenBaars et al. "Recent advances in High Brightness GaN based LEDs", Proceedings of the International conference on Display LEDs ICDL2007, 66-70 (2007).
2. X.A. Cao, P.M. Sandvik, S.F. LeBoeuf, and S.D. Arthur, "Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses," Microelectron. Reliab. 43, 1987-1991 (2003).
3. N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu and L. Deng, "Solid-state lighting: failure analysis of white LEDs," Jour. of Cry. Growth, 268(3-4) 449-456 (2004).
4. M. Meneghini et al., "High-Temperature Degradation of GaN LEDs Related to Passivation," IEEE Trans. Elec. Dev., 53(12) 2981-2987 (2006).
5. V. Székely and T. Van Bien, "Fine structure of heat flow path in semiconductor devices: a measurement and identification method," Solid-State Elect. 31(9), 1363-1368 (1988).
6. Y. Xi and E. F. Schubert, Applied Physics Letters, 85, 2163, (2004).
7. Y. Xi et al., "Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods," Applied Physics Letters, 86, 031907 (2005).
8. S. Ishizaki, H. Kimura and M. Sugimoto, "Lifetime estimation of high power LEDs," J. Light & Vis. Env., 31(1), 11-18 (2007).
9. M. Meneghini et al., "Stability and performance evaluation of high-brightness light-emitting diodes under DC and pulsed bias conditions," Proc. SPIE, 6337, 63370R (2006).
10. M. Meneghini et al., "High temperature electro-optical degradation of InGaN/GaN HBLEDs," Proc. ESREF 2007 (2007).
11. O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, "Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes," Appl. Phys. Lett, 79(18), 2895-2897 (2001).
12. th IEEE Semi-Therm Symposium, 168-176 (2004).