High temperature electro-optical degradation of InGaN/GaN HBLEDs

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1625-1629

  Meneghini, M ^a   Trevisanello, L ^a   Sanna, C ^a   Mura, G ^b   Vanzi, M ^b   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; OHMIC CONTACTS; OPTICAL PROPERTIES; PYROLYSIS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL STRESS;

ELECTRICAL PARAMETERS; EMISSION BAND; HIGH BRIGHTNESS LIGHT EMITTING DIODES (HBLED);

LIGHT EMITTING DIODES;

EID: 34548691260     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.081     Document Type: Article

References (8)

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7. Meneghini M., et al. Proc SPIE 6337 (2006) 63370R
8. Meneghini M., et al. IEEE Trans Electron Devices 53 12 (2006) 2981-2987