GaN-based power LEDs with CMOS ESD protection circuits

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 2, 2007, Pages 340-346

  Horng, J J ^b   Su, Y K ^a,b   Chang, S J ^a,b   Chen, W S ^b   Shei, S C ^c  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

CMOS; Electrostatic discharge (ESD); Flip chip technology; GaN; Light emitting diode (LED)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROSTATIC DISCHARGE; FLIP CHIP DEVICES; GALLIUM NITRIDE;

PROTECTION CIRCUITS;

LIGHT EMITTING DIODES;

EID: 34548226345     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.901059     Document Type: Conference Paper

References (22)

1. S. Nakamura, T. Mukai, and M. Senoh, "High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes," J. Appl. Phys., vol. 76, no. 12, pp. 8189-8191, Dec. 1994.
2. I. Akasaki and H. Amano, "Crystal growth and conductivity control of group Ill-nitride semiconductors and their applications to shoit wavelength light emitters," Jpn. J. Appl. Phys., vol. 36, no. 9A, pp. 5393-5408, 1997.
3. S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, C. M. Wang, and B. R. Huang, "Nitride-based LEDs with P-InGaN capping layer," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2567-2570, Dec. 2003.
4. C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo, and Y. C. Lin, "Nitride-based cascade near white light emitting diodes," IEEE Photon. Technol. Lett, vol. 14, no. 7, pp. 908-910, Jul. 2002.
5. E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science, vol. 308, no. 5726, pp. 1274-1278, May 2005.
6. J. I. Pankove, "Perspective on gallium nitride," in Proc. Mater. Res. Soc. Symp., May 1990, vol. 162, pp. 515-519.
7. S. P. Sim, M. J. Robertson, and R. G. Plumb, "Catastrophic and latent damage in GaAlAs laser caused by electrical transient," J. Appl Phys., vol. 55, no. 11, pp. 3950-3955, Jun. 1984.
8. T. Inoue, "Light-emitting devices," Japanese Patent H11-040848, 1999. (in Japanese).
9. S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu, and S. C. Chen, "Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes," IEEE Electron Device Lett., vol. 24, no. 3, pp. 129-131, Apr. 2003.
10. G. Meneghesso, S. Podda, and M. Vanzi, "Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs," Microelectron. Reliab., vol. 4.1, no. 9/10, pp. 1609-1614, Oct. 2001.
11. Y. K. Su, S. J. Chang, S. C. Wei, S. M. Chen, and W. L. Li, "ESD engineering of nitride-based LEDs," IEEE Trans. Device Mater. Rel., vol. 5, no. 2, pp. 277-281, Jun. 2005.
12. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes," IEEE J. Sel, Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar./Apr. 2002.
13. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W C. Lai, J. F. Chen, and J. M. Tsai, "400 nm InGaN/GaN and InGaN/ AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul./Aug. 2002.
14. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, "Highly reliable nitride based LEDs with SPS+ITO upper contacts," IEEE J. Quantum Electron., vol. 39, no. 11, pp. 1439-1443, Nov. 2003.
15. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, "Nitride-based flip-chip ITO LEDs," IEEE Trans. Adv. Packag., vol. 28, no. 2, pp. 273-277, May 2005.
16. J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, "Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes," J. Electrochem. Soc., vol. 152, no. 1, pp. G92-G94, 2005.
17. J. Song, D. S. Lee, J. S. Kwak, O. H. Nam, Y. Park, andT. Y. Seong, "Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1450-1452, Jun. 2004.
18. J. C. Bha, A. Kim, D. Collins, R. Fletcher, R. Khare, and S. Rudaz, "High efficiency monochromatic and white InGaN flip-chip dice," in. Proc. Inst. Phys., Conf. Series, 2002, vol. 170, pp. 243-248.
19. Y. Ohki, Y. Toyoda, H. Kobayashi, and I. Akasaki, "Fabrication and properties of a practical blue-emitting GaN," in. Proc. Inst. Phys., Conf. Ser., 1981, vol. 63, pp. 479-486.
20. J. O. Song, W. K. Hong, Y. Park, J. S. Kwak, and T. Y. Seong, "Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes," Appl. Phys., Lett, vol. 86, no. 13, p. 133503, Mar. 2005.
21. A. Amerasekera, L. V. Roozendaal, J. Abderhalden, J. Bruines, and L. Sevat, "An analysis of low voltage ESD damage in advanced CMOS processes," in. Proc. EOS/ESD Symp., 1990, vol. EOS-12, pp. 143-150.
22. J. E. Barth, K. Verhaege, L. G. Henry, and J. Richner, 'TLP calibration, correlation, standards, and new techniques," IEEE Trans. Electron. Packag. Manufi, vol. 24, no. 2, pp. 99-108, Apr. 2001.