Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

Microelectronics Reliability

Volumn 43, Issue 12, 2003, Pages 1987-1991

  Cao, X A ^a,b   Sandvik, P M ^a   LeBoeuf, S F ^a   Arthur, S D ^a  

^a GE GLOBAL RESEARCH   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LEAKAGE CURRENTS; MICROSTRUCTURE; POINT DEFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

REVERSE ELECTRICAL STRESSES;

LIGHT EMITTING DIODES;

EID: 0242335115     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.06.001     Document Type: Article

References (15)

1. Nakamura S., Akaski I., Amano H. Pankove J.I., Moustakas T.D. Gallium nitride (GaN) I. 1998;Academic Press.
2. Egawa T., Jimbo T., Umeno M. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates. J. Appl. Phys. 82:1997;5816-5821.
3. Osinski M., Zeller J., Chiu P.C., Phillips B.S., Barton D.L. AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress. Appl. Phys. Lett. 69:1996;898-900.
4. Sugiura L. Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices. Appl. Phys. Lett. 70:1997;1317-1319.
5. Khait Y.L., Saizman J., Beserman R. Kinetic model for gradual degradation in semiconductor lasers and light-emitting diodes. Appl. Phys. Lett. 53:1988;2135-2137.
6. Manyakhin F., Kovalev A., Yunovich A.E. Aging mechanisms of InGaN/AlGaN/GaN light emitting diodes operating at high currents. MRS Internet. J. Nitride Semicond. Res. 3:1998;. (No. 53).
7. Yanagisawa T. Estimation of the degradation of InGaN/GaN blue light-emitting diodes. Microelectron. Reliab. 37:1997;1239-1241.
8. Cao X.A., Stokes E.B., Sandvik P.M., Taskar N., Kretchmer J., Walker D. Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes. Solid State Electron. 46:2002;1235-1239.
9. Cao X.A., Stokes E.B., Sandvik P.M., LeBoeuf S.F., Kretchmer J., Walker D. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes. IEEE Electron. Dev. Lett. 23:2002;535-537.
10. Perlin P., Osinski M., Eliseev P.G., Smagley V.A., Mu J., Banas M.et al. Low temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light emitting diodes. Appl. Phys. Lett. 69:1996;1680-1682.
11. Steigerwald D.A., Blat J.C., Collins D., Fletcher R.M., Holcomb M.O., Ludowise M.J.et al. Illumination with solid state lighting technology. IEEE J. Sel. Top. Quant. Electron. 8:2002;210-220.
12. Zolina K.G., Kudryashov V.E., Turkin A.N., Yunovich A.E., Nakamura S. Luminescence spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes. MRS Internet. J. Nitride Semicond. Res. 1:1996;. (No. 11).
13. Ogawa J., Tamamura K., Akimoto K., Mori Y. Degradation in GaAs/AlGaAs double-heterostructure light emitting diodes. Appl. Phys. Lett. 51:1987;1949-1950.
14. Pursiainen O., Linder N., Jaeger A., Oberschmid R., Streubel K. Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes. Appl. Phys. Lett. 79:2001;2895-2897.
15. Mroziewicz B., Bugajski M., Nakwaki W. Physics of semiconductor lasers. 1994;Elsevier, Amsterdam.