High-temperature degradation of GaN LEDs related to passivation

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 2981-2986

  Meneghini, Matteo ^a,b   Trevisanello, Lorenzo Roberto ^b   Zehnder, Ulrich ^c   Zahner, Thomas ^c   Strauss, Uwe ^c   Meneghesso, Gaudenzio ^a,b   Zanoni, Enrico ^a,b  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Degradation; Gallium nitride; Light emitting diode (LED); Passivation

Indexed keywords

DEGRADATION MECHANISMS; EMISSION CROWDING; PASSIVATION LAYERS; RADIATIVE EFFICIENCY DEGRADATION; RADIATIVE EFFICIENCY LOSS;

ACTIVATION ENERGY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; HYDROGEN; OHMIC CONTACTS; PASSIVATION; TRANSPORT PROPERTIES;

LIGHT EMITTING DIODES;

EID: 33947239842     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885544     Document Type: Article

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