Defect-related recombination in InGaN-lasers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2192-2194

  Schillgalies, M ^a   Laubsch, A ^a   Lutgen, St ^a   Avramescu, A ^a   Bruderl G ^a   Queren, D ^a   Strauss, U ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES IN; INGAN QUANTUM WELLS; INTERNAL QUANTUM EFFICIENCY; LASER PERFORMANCE; MAGNESIUM CONCENTRATIONS; NON-RADIATIVE RECOMBINATIONS; TEMPERATURE RANGE; THERMAL RELEASE; THERMALLY ACTIVATED;

DEFECTS; ELECTROLUMINESCENCE; MAGNESIUM; NITRIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 73349114037     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778537     Document Type: Conference Paper

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