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Semiconductor Science and Technology

Volumn 24, Issue 5, 2009, Pages

Redistribution of multi-quantum well states induced by current stress in InxGa1-xN/GaN light-emitting diodes

(6) Rigutti, L a,c Basirico L a Cavallini, A a Meneghini, M b Meneghesso, G b Zanoni, E b

a UNIVERSITY OF BOLOGNA (Italy)

b UNIVERSITY OF PADOVA (Italy)

c UNIVERSITÉ PARIS SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CURRENT STRESS; CURRENT VOLTAGE; DC CURRENT STRESS; DENSITY OF STATE; INGAN/GAN; MULTIQUANTUM WELLS; PHOTOCURRENT SPECTROSCOPY; PHOTOCURRENT SPECTRUM; STRESS TIME;

ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; PHOTOCURRENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 68949083283 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/24/5/055015 Document Type: Article

Times cited : (7)

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